MRAM storage unit and storage array based on spin orbit moment

Abstract

The invention provides an MRAM (Magnetic Random Access Memory) storage unit based on spin orbit moment and a storage array. The memory cell includes: a spin orbit moment supply line, a magnetic tunneljunction, a selector, and a transistor. One side of the magnetic tunnel junction free layer is in contact with the spin orbit moment providing line, one side of the fixed layer is connected with oneend of a selector, the connecting end serves as a first leading-out end of the storage unit, the other end of the selector is connected with the spin orbit moment providing line, and a connecting point is located on one side of a magnetic tunnel junction contact point; the drain electrode of the transistor is connected to one end in the length direction of the spin orbital moment providing line, the connecting point is located on the other side of the magnetic tunnel junction contact point, the source electrode of the transistor serves as the second leading-out end of the storage unit, and thegrid electrode of the transistor serves as the third leading-out end of the storage unit, wherein the first leading-out terminal is used for connecting a bit line, the second leading-out terminal isused for connecting a source line, and the third leading-out terminal is used for connecting a word line. The structure of the storage unit can be simplified, and the area of the storage unit is saved.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to an MRAM storage unit and a storage array based on spin-orbit moments. Background technique [0002] The core part of the storage unit of Magnetic Random Access Memory (MRAM) is the magnetic tunnel junction MTJ. MTJ is a two-port structure device composed of multilayer films. The magnetic layers are separated by a tunneling barrier layer. One of the ferromagnetic layers has a fixed magnetization direction, called the fixed layer or reference layer, and the other ferromagnetic layer can change the magnetization direction, called the free layer. [0003] In the initial magnetic memory, the writing operation to the MTJ depends on the spin transfer torque of the fixed layer to the free layer, and a large voltage needs to be applied across the MTJ. Repeated operations will cause damage to the barrier layer, thereby reducing the durability of the MTJ. . In order to improve th...

AI Technical Summary

Problems solved by technology

[0006] Existing spin-orbit moment MRAM memory cells have many metal wires and complex connections, resulting in a large memory cell area

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