A quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low quantum yield and low luminous efficiency of quantum dot light-emitting diodes, so as to improve luminous efficiency and improve quantum Yield, reduced energy transfer effect

Active Publication Date: 2021-05-18
TCL CORPORATION
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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and a preparation method thereof, aiming at solving the problem that the quantum yield of the existing quantum dot material is low, resulting in low luminous efficiency of the quantum dot light-emitting diode. question

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  • A quantum dot light-emitting diode and its preparation method

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Embodiment Construction

[0012] The present invention provides a quantum dot light-emitting diode and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0013] There are various forms of quantum dot light-emitting diodes, and the quantum dot light-emitting diodes are divided into positive structure and inversion structure, and the quantum dot light-emitting diodes of the inversion structure may include substrates, cathodes, electrons and other components stacked from bottom to top. Transport layer, quantum dot light emitting layer, hole transport layer and anode. And in the specific embodiment of the present invention will mainly be as figure 1 The quantum dot light-emitting diode with positive struct...

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Abstract

The invention discloses a quantum dot light emitting diode and a preparation method thereof, wherein the quantum dot light emitting diode comprises a cathode, an anode and a quantum dot light emitting layer arranged between the cathode and the anode, and the quantum dot light emitting layer is made of materials. It is a mixed material composed of quantum dots and oil-soluble PAMAM dendrimers, and the exciton Bohr radius of the quantum dots is larger than the diameter of the quantum dots. In the present invention, the spatial distance between the quantum dots in the quantum dot light-emitting layer will be effectively pulled apart by the oil-soluble PAMAM dendrimers, thereby effectively reducing the energy transfer between the quantum dots, and indirectly improving the The fluorescence intensity of the quantum dot light-emitting layer; in addition, the oil-soluble PAMAM dendrimer can be wrapped on the surface of the quantum dot to bind the excitons, thereby improving the quantum yield of the quantum dot light-emitting layer, thereby improving the quantum dot light-emitting diode. Luminous efficiency.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] In quantum dot light-emitting diodes, when quantum dots whose exciton Bohr radius is much larger than the particle size are used as the material of the light-emitting layer, the luminous efficiency of the device is low. The main reason is that the quantum dots and quantum dots in the light-emitting layer Exciton energy transfer occurs between them, resulting in a lower quantum yield (QY). [0003] For quantum dot light-emitting diodes that use quantum dots whose exciton Bohr radius is much larger than the particle size as the quantum dot light-emitting layer material, how to improve the quantum yield of the quantum dot light-emitting layer is the key to improving the luminous efficiency of quantum dot light-emitting diodes. The existing technology is to grow a wide ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K71/00H10K50/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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