Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device and method for preparing high-purity gallium

A high-purity, cooling water pipe technology, applied in the direction of chemical instruments and methods, self-regional melting method, single crystal growth, etc., can solve the problems of low purification efficiency and unstable interface, so as to improve the purification efficiency, ensure the purity and avoid shaking Effect

Inactive Publication Date: 2020-06-12
华厦半导体(深圳)有限公司
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the above-mentioned prior art, the present invention provides a device and a preparation method for preparing high-purity gallium to solve the problems of interface instability and low purification efficiency in the prior art during zone smelting

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for preparing high-purity gallium
  • Device and method for preparing high-purity gallium
  • Device and method for preparing high-purity gallium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] In the embodiment of the present invention, such as Figure 1~2 As shown, a device for preparing high-purity gallium is provided, and the device in the present invention includes a melting cylinder 1 and an auxiliary melting system. Such as figure 2 As shown, the smelting cylinder 1 is in the shape of a cylinder as a whole, and its two ends are sealed. In order to ensure the stable and efficient smelting, the smelting cylinder 1 is preferably made of a hard material with good heat conduction, such as stainless steel. However, in order to be able to Visually observe the melting condition in the melting cylinder. The melting cylinder is preferably made of transparent materials such as quartz or glass. And the height of the melting cylinder 1 is set to 1500mm, the thickness is set to 2mm, and the inner diameter is set to 50mm. The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a device and a method for preparing high-purity gallium. The device comprises a smelting cylinder and an auxiliary smelting system. The two ends of the smelting cylinder are sealed, the top and the bottom of the smelting cylinder are respectively provided with a feeding valve and a discharging valve, the inner wall of the smelting cylinder is coated with an anti-sticking layer, the periphery of the smelting cylinder is provided with a shell, the shell is separated from the smelting cylinder, an annular cooling water cavity is formed between the shell and the smelting cylinder, and the discharging valve extends out of the shell; a water outlet is formed in the lower end of shell. The auxiliary smelting system comprises a lifting part, and a cooling water pipe and aninduction heating coil which are suspended on the lifting part; the cooling water pipe is located in the annular cooling water cavity, the induction heating coil is located outside the shell, the cooling water pipe and the induction heating coil are driven by the lifting system to vertically move up and down, and the heights are kept consistent all the time in the moving process. With applicationof the device with the structure, 4N gallium can be purified to 8N, and the problems of unstable interface and low purification efficiency during zone melting in the prior art can be effectively solved.

Description

technical field [0001] The invention belongs to the technical field of preparation of high-purity gallium, and in particular relates to a device and a preparation method for preparing high-purity gallium. Background technique [0002] Gallium (Ga) is a typical scattered metal, and it is one of the rare metals purchased and stored as a national strategy. As an important semiconductor basic material, high-purity gallium is widely used in the fields of electronic materials, optoelectronic materials, optical materials and thermoelectric materials. Gallium compound semiconductor materials (GaAs, GaN, GaP, GaAlAs, etc.) have become one of the important supporting materials in the fields of contemporary communications, integrated circuits, aerospace, energy and even medical care. The high-purification and refined preparation of gallium metal is an important way to develop high value-added products. The purity of gallium metal directly determines its application field and product v...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/02C30B28/08C30B13/20
CPCC30B13/20C30B28/08C30B29/02
Inventor 谈逊谈谦
Owner 华厦半导体(深圳)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products