Monolithic integrated dual-wavelength semiconductor laser and its preparation method

Abstract

The invention discloses a single-chip integrated dual-wavelength semiconductor laser and a preparation method thereof, belonging to the technical field of semiconductor lasers. The semiconductor laser includes: a first laser, a second laser, a first isolation groove and a second isolation groove, the first laser includes a first laser P electrode, and the second laser includes a second laser P electrode and a second laser Bridge electrode; wherein, the second laser P electrode is located between the first laser P electrode and the second laser bridge electrode, and the first isolation groove is prepared between the first laser P electrode and the second laser P electrode; the The second isolation groove is prepared between the P electrode of the second laser and the bridge electrode of the second laser. In the present invention, the two lasers can work simultaneously or separately through the special design of the current of the two lasers and the isolation groove.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a single-chip integrated dual-wavelength semiconductor laser and a preparation method thereof. Background technique [0002] Semiconductor lasers have the advantages of high output power, small size, light weight, and high photoelectric conversion efficiency, especially semiconductor edge-emitting lasers have great advantages in high efficiency, high power, and gas detection. [0003] A common semiconductor laser is a PN junction structure or a PIN junction structure, and its lasing wavelength is directly affected by the material and structure of the active region. Although the gain peak of a semiconductor laser is relatively wide, it can achieve a tuning excitation of more than ten nanometers or even a hundred nanometers. But its lasing wavelength basically floats in a fixed wavelength range, that is, it can only work in a single wavelength range. In the fields of gas monitor...

AI Technical Summary

Problems solved by technology

[0003] A common semiconductor laser is a PN junction structure or a PIN junction structure, and its lasing wavelength is directly affected by the material and structure of the active region. Although the gain peak of a semiconductor laser is relatively wide, it can achieve a tuning excitation of more than ten nanometers or even a hundred nanometers. But its lasing wavelength basically floats in a fixed wavelength range, that is, it can only work in a single wavelength range. In the fields of gas monitoring and laser processing, lasers with different wavelengths need to be matched for different gases and processing materials. In order to obtain multiple The current method is to configure multiple semiconductor lasers with different chips. Since each semiconductor laser requires a separate pump source and cooling device, the volume and weight of the entire device will increase linearly.

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