Preheating type spraying assembly

Abstract

The invention relates to the field of semiconductor CVD, in particular to a preheating type spraying assembly. The preheating type spraying assembly is used for feeding reaction source gas into a reaction cavity and comprises a spraying top cover and at least one spraying layer arranged below the spraying top cover, wherein the spraying layers comprise spraying plate cavities, the upper portions of the spraying plate cavities are connected with air inlet pipelines used for air inlet, pipeline heating assemblies are arranged on the air inlet pipelines, air outlet holes are formed in the lower portions of the spraying plate cavities and penetrate through the reaction cavity, and the flow resistance of the air outlet holes is larger than the flow resistance of the air inlet pipelines. According to the preheating type spraying assembly, the reaction source gas can be separately fed by utilizing the independently layered spraying layers, and the reaction source gas is preheated by utilizingthe pipeline heating assemblies before entering the spraying plate cavities, so that the reaction source gas cannot be mixed to generate a pre-reaction before reaching the reaction cavity, sufficientreaction in the reaction cavity is guaranteed, the decomposition utilization rate of reaction source gas can be increased, and the process rate is increased.

Description

technical field [0001] The invention relates to the field of semiconductor CVD, in particular to a preheating spray assembly. Background technique [0002] At present, CVD (Chemical Vapor Deposition) technology has the ability to form artificial synthetic materials in any proportion; precisely control the thin film at the atomic level and make various thin film structural materials; it can be made into large-area uniform thin film materials, which is easy to form industrialization ; can grow ultra-pure materials; and flexible gas source control and other advantages. [0003] In the preparation of thin film materials, it is usually necessary to mix and react a variety of reaction gas raw materials. However, due to the different decomposition temperatures of the gases, when the same spray assembly enters the reaction chamber, it cannot be effectively decomposed and utilized, and the chemical reaction cannot fully occur. The gas not only increases the cost of raw materials, bu...

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Problems solved by technology

[0003] In the preparation of thin film materials, it is usually necessary to mix and react a variety of reaction gas raw materials. However, due to the different decomposition temperatures of the gases, when the same spray assembly enters the reaction chamber, it cannot be effectively decomposed and utilized, and the chemical reaction cannot fully occur. The gas not only increases the cost of raw materials, but also increases the frequency, difficulty and cost of maintenance of spray components. Therefore, how to improve the utilization rate of reactive gas raw materials has become a technical problem to be solved urgently in the industry

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