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Semiconductor module

A technology of semiconductors and bipolar transistors, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc.

Active Publication Date: 2020-06-26
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To solve this problem, in the technology of Patent Document 1, the conduction voltage of the main diode is set lower than the initial conduction voltage of the body diode, thereby suppressing the conduction of the body diode

Method used

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  • Semiconductor module
  • Semiconductor module
  • Semiconductor module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] figure 1 An inverter circuit including the semiconductor module 10 of the embodiment is shown. The inverter circuit includes a high-potential wiring 90 , a low-potential wiring 92 , and three output wirings 94 , 96 , and 98 . Between the high-potential wiring 90 and the low-potential wiring 92 , a DC voltage is applied from a power supply (not shown). The output lines 94, 96, 98 are connected to an L load 88 (for example, a three-phase motor). One semiconductor module 10 is connected between the high potential wiring 90 and the output wiring 94 . One semiconductor module 10 is connected between the high potential wiring 90 and the output wiring 96 . One semiconductor module 10 is connected between the high potential wiring 90 and the output wiring 98 . One semiconductor module 10 is connected between the low potential wiring 92 and the output wiring 94 . One semiconductor module 10 is connected between the low potential wiring 92 and the output wiring 96 . One sem...

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PUM

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Abstract

The invention suppresses degradation of SiC crystal caused by surge current. Provided is a semiconductor module. The semiconductor module may include: a first semiconductor chip including a first semiconductor substrate including a field effect transistor and constituted of SiC, a drain electrode and a source electrode provided on the first semiconductor substrate; a second semiconductor chip including a second semiconductor substrate including a diode, a cathode electrode and an anode electrode provided on the second semiconductor substrate; a first lead frame including a first main terminaland connected to the drain electrode and the cathode electrode; and a second lead frame including a second main terminal and connected to the source electrode and the anode electrode. A first currentpath extending from the second to first main terminal via the first semiconductor chip may be longer than a second current path extending from the second to first main terminal via the second semiconductor chip.

Description

technical field [0001] The technology disclosed in this specification relates to a semiconductor module. Background technique [0002] Patent Document 1 discloses a semiconductor module. This semiconductor module includes a field effect transistor (hereinafter referred to as FET) and a diode (hereinafter referred to as main diode). The FETs are provided on a semiconductor substrate made of SiC (silicon carbide). The drain of the FET and the cathode of the main diode are connected to a common terminal (hereinafter referred to as a first terminal), and the source of the FET and the anode of the main diode are connected to a common terminal (hereinafter referred to as a second terminal). A body diode is formed as a parasitic inside the FET. The anode of the body diode is connected to the source (ie, the second terminal) of the FET, and the cathode of the body diode is connected to the drain (ie, the first terminal) of the FET. Therefore, the main diode and the body diode ar...

Claims

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Application Information

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IPC IPC(8): H01L23/495H01L25/07H02M1/00H02M1/32H02M7/00
CPCH01L25/072H01L23/49575H02M1/00H02M1/32H02M7/003H01L2224/0603H01L2924/181H01L2224/73265H01L2224/48247H01L2224/32245H01L2224/33181H01L23/49562H01L23/49537H01L23/4334H01L29/7395H01L29/7802H01L29/1608H01L29/872H01L2924/00012H01L2924/00H01L29/78H01L29/861
Inventor 杉浦秀和
Owner DENSO CORP