Coupled inductor gate drive circuit for realizing parallel dynamic current sharing of eGaN HEMT

Abstract

The invention discloses a coupled inductor gate drive circuit for realizing parallel dynamic current sharing of eGaN HEMT. The coupled inductor gate drive circuit includes a voltage totem-pole structure unit connected between a positive power supply and a negative power supply, a coupling inductor driving unit connected with the voltage totem-pole structure unit; the coupling inductor driving unitcomprises a first driving resistor, a first diode, a second driving resistor, a second diode, a first coupling inductor and a second coupling inductor. The coupling inductor drive circuit is connected to the grid electrode of the second power tube through the first coupling inductor secondary side and connected to the grid electrode of the first power tube through the second coupling inductor secondary side, and the first power tube and the second power tube are connected in parallel. According to the drive circuit, compensation signals are provided for the grid electrode through the couplinginductor, and parallel dynamic current sharing is achieved while high-speed switching of the eGaN HEMT is met.

Description

technical field [0001] The invention belongs to the field of power electronics technology and electrotechnical technology, and relates to a drive circuit suitable for eGaN HEMTs, in particular to a coupled inductance gate drive circuit for realizing parallel dynamic current sharing of eGaN HEMTs. Background technique [0002] Gallium nitride (GaN) devices, as one of the representative devices of new wide bandgap semiconductors, have device advantages such as lower on-resistance, faster switching speed and higher junction temperature working ability than Si devices. As a power device for making converters, Si devices are expected to significantly increase the maximum operating frequency and efficiency of converters, and reduce their volume and weight. [0003] The current rating of existing commercial GaN devices is relatively low, which cannot meet the needs of large-capacity systems. Therefore, the operating current can be expanded by parallel connection. In actual use, du...

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Problems solved by technology

[0003] The current rating of existing commercial GaN devices is relatively low, which cannot meet the needs of large-capacity systems, so the operating current can be expanded by parallel connection

In actual use, due to factors such as device parameter dispersion and circuit parameter asymmetry, there will be uneven current problems in parallel devices.

[0004] At present, methods such as screening parallel devices, symmetrical layout design, impedance balance, and gate resistance compensation have been proposed in the literature for the problem of parallel uneven current in the application of GaN-based parallel circuits. However, these methods have certain limitations. The design partially or completely depends on the screening and layout design of parallel devices, the circuit does not have the function of actively controlling the current imbalance, and the practical application value is limited

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