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Trench gate IGBT and device

A trench gate and trench technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of high dynamic power consumption of trench gate IGBT

Inactive Publication Date: 2020-07-03
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a trench gate IGBT and a device to solve the technical problem of excessive dynamic power consumption of the trench gate IGBT in the prior art, so as to achieve the beneficial effect of reducing the dynamic power consumption of the trench gate IGBT

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  • Trench gate IGBT and device
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Embodiment Construction

[0025] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0026] The performance of trench gate IGBT can be divided into dynamic characteristics and static characteristics. Among them, the static characteristics are mainly reflected in the conduction voltage drop of the trench gate IGBT. The lower the conduction voltage drop, the lower the on-state power consumption of the trench gate IGBT, and the bette...

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Abstract

The embodiment of the invention provides a trench gate IGBT and a trench gate IGBT device. According to the invention, the trench gate IGBT in the prior art is improved, and the improved trench gate IGBT comprises an emitter, a p well region, a gate, a gate oxidation layer, a drift region and a back collector electrode, wherein the gate is located in a trench, the gate is isolated from the emitter, the p well region and the drift region by the gate oxidation layer, the trench is arranged in a substrate, and a plurality of recesses are formed in the boundary of the trench and the drift region;and in the switching process of the trench gate IGBT, a plurality of recessed gate oxidation layers arranged on the interface of the side surface of the trench and the drift region can bind and accumulate electron charges, so that the conduction capability is improved, the technical problem of over-high switching power consumption of the trench gate IGBT in the prior art is solved, and the beneficial effect of reducing the switching power consumption of the trench gate IGBT is achieved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to trench gate IGBTs and devices. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET The advantages of the high input impedance of the device and the low conduction voltage drop of the power transistor (that is, the giant transistor, GTR for short), because the IGBT has the advantages of small driving power and low saturation voltage, the IGBT is currently used as a new type of power electronic device It is widely used in various fields. [0003] IGBT can be further divided into planar gate IGBT and trench gate IGBT, and the performance of trench gate IGBT can be divided into dynamic characteristics and static characteristics. Among the...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/423
CPCH01L29/7397H01L29/4236H01L29/42368
Inventor 兰昊冯宇翔
Owner GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD
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