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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, applied in the field of quantum dots, can solve the problems of low luminous efficiency and unbalanced charge injection of quantum dot light-emitting diodes

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of low luminous efficiency caused by the unbalanced charge injection of the existing quantum dot light-emitting diodes

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  • Quantum dot light-emitting diode and preparation method thereof

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Embodiment Construction

[0017] The present invention provides a quantum dot light-emitting diode and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0018] There are various forms of quantum dot light-emitting diodes, and the quantum dot light-emitting diodes are divided into positive structure and inverse structure. In some embodiments, the quantum dot light-emitting diodes of the positive structure include substrates stacked from bottom to top , a bottom electrode, a quantum dot light-emitting layer, an electron transport layer and a top electrode. For a quantum dot light-emitting diode with a positive structure, the bottom electrode arranged on the substrate is an anode. In one embodiment of the...

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Abstract

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises a cathode, an anode and a quantum dot light-emitting layer arranged between the cathode and the anode, an electron transport layer is further arranged between the cathode and the quantum dot light-emitting layer, the electron transport layer is made of nano metal oxide which is cross-linked together through a chelating agent, and the chelating agent contains at least three carboxyl functional groups. According to the quantum dot light emitting diode, the nano metal oxide which is cross-linked together through the chelating agent is used as an electron transport layer material, so that the electron mobility of the quantum dot light emitting diode can beimproved, the electron hole injection rate of the quantum dot light emitting diode is balanced, and the light emitting efficiency of the quantum dot light emitting diode is further improved.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode is an important new display technology in the future. There are still many technical problems in the commercialization of quantum dot display technology, such as unstable device efficiency and poor lifespan. The main factor affecting these devices is the imbalance of the charge injection of the device. lead to. [0003] When quantum dots with different structural systems are used to prepare quantum dot light-emitting diodes (QLEDs) under the same device structure, the device efficiency and lifetime will be different. The reason is that quantum dots with different structural systems have different requirements for electron-hole injection balance, so The charge injection balance of the device needs to be tuned and optimized. [0004] When quantum dots of ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/16H10K2102/00H10K2102/331H10K71/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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