Special protection circuit in silicon carbide diode chip

A technology of silicon carbide diodes and protection circuits, applied in emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, circuits, etc., can solve the problem of increasing the complexity of the structure of the protection circuit, potential safety hazards, There are problems such as electromagnetic interference to achieve the effect of avoiding high voltage breakdown, improving protection performance, and preventing electromagnetic interference
CN111404133AInactive Publication Date: 2020-07-10CHANGZHOU GIANTION PHOTOELECTRICITY IND DEV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
CHANGZHOU GIANTION PHOTOELECTRICITY IND DEV
Publication Date
2020-07-10
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention belongs to the technical field of semiconductors. The invention relates to a special protection circuit in a silicon carbide diode chip. The special protection circuit comprises a packaging shell, one or more chips which are located in the packaging shell and connected in series, and leads which are connected to the two ends of the packaging shell, a silicon carbide diode and a protection circuit are arranged in each chip, the protection circuit comprises an inductor and a capacitor, and the protection circuit formed by connecting the inductor and the capacitor in series is connected with the silicon carbide diode in parallel; the protection circuit further comprises a resistor connected with the capacitor in parallel, and the capacitor and the resistor which are connected inparallel are connected with the inductor in series. The special protection circuit eliminates and absorbs peak high voltage and high-frequency interference harmonic waves generated by the silicon carbide diode and an inductance element during application in a packaging structure, so that the circuit is protected, and the service life of the silicon carbide diode is prolonged; the width of the forbidden band is stabilized and widened, the depth is increased, and parasitic harmonics are absorbed.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a dedicated protection circuit in a silicon carbide diode chip. Background technique

[0002] Silicon carbide is the most mature wide-bandgap semiconductor material at present. Compared with ordinary silicon components, it has high withstand voltage and is widely used in switching power supplies and high-frequency rectifiers. However, due to its application in high-voltage circuits, when there is a reverse electromotive force, there are dangers such as creepage and leakage, and there are great potential safety hazards; during use, due to the existence of resistance, it will affect the resonant frequency and affect the absorption depth of the diode. .

[0003] When the existing silicon diodes are used, due to their limited voltage withstand performance, a safety circuit is usually connected in parallel to protect the circuit; however, when silicon carbide diode...

Claims

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