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A High Precision Timing Silicon Photomultiplier Diode System Resistant to Signal Buildup

A diode and silicon photoelectric technology, applied in the field of photodetectors, can solve problems such as complex system design and degraded timing accuracy, and achieve the effects of reducing signal connections, solving accumulation and baseline fluctuations

Active Publication Date: 2022-04-26
杭州宇称电子技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the complex structure and electrical model of the sensor, the termination resistance will affect the fast port signal, slow down its signal rising speed and amplitude, and degrade the timing accuracy
[0005] 2. The dark noise pulse generated by SiPM at room temperature will produce a pile-up effect on the signal baseline due to the wide pulse output by the anode
Although the SiPM fast output port can provide a simple and accurate time measurement solution, because each sensor needs to be equipped with two output ports, the connection between the detector and the integrated circuit chip is too dense, which makes the system design too complicated

Method used

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  • A High Precision Timing Silicon Photomultiplier Diode System Resistant to Signal Buildup
  • A High Precision Timing Silicon Photomultiplier Diode System Resistant to Signal Buildup

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Embodiment 1

[0022] Such as figure 2 As shown, the implementation of the high-precision timing silicon photomultiplier diode module that is resistant to signal pile-up is shown, figure 2 The left side of the middle is the equivalent circuit structure of a silicon photomultiplier diode detector. Several diodes are connected in series with their respective avalanche quenching resistors R q and parasitic capacitance C q A number of diode pixels are formed, and the diode pixels can be used with a voltage source, an on-resistance R p , avalanche switch and diode capacitance equivalent C p Equivalently, each pixel is an avalanche diode, and a resistor R is connected in series q Used to quench the avalanche of the diode, this avalanche diode is added with a resistor R q To form a pixel, the entire device is composed of thousands of pixels connected in parallel, and other pixels that are not avalanche can be considered as connected in parallel, and their electrical models are converted into ...

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Abstract

The invention belongs to the technical field of photodetectors, and specifically relates to a high-precision timing silicon photomultiplier diode system that resists signal accumulation, including a plurality of silicon photomultiplier diodes, and the plurality of diodes are respectively connected in series with their respective avalanche quenching resistors R q and parasitic capacitance C q Several diode pixels are formed, the anode output ports of the several diodes are grounded, and the fast output ports of the several diodes pass through the coupling capacitor C f A signal output port is formed by being connected with each diode pixel, and the signal output port is connected to a time signal processing unit and an energy signal processing unit to respectively output a time processing signal and an energy processing signal. The anti-signal accumulation high-precision timing silicon photomultiplier diode system of the present invention fully utilizes the precise time performance of the fast and accurate pulse of the fast output port, alleviates or solves the accumulation and baseline fluctuation problems of the charge measurement channel, and can reduce the signal Connect to only one port connection.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, in particular to a high-precision timing silicon photomultiplier diode system that resists signal accumulation. Background technique [0002] Silicon photomultiplier diode (Silicon Photomultiplier, SiPM) is widely used as a photodetection device. Because of its high internal gain, it can be used as a sensor device for extremely weak light or even single photon detection. Each photon absorbed by the sensor can generate about 10 photons through Geiger Mode Avalanche on average 6 signal of an electron charge. Due to the large signal generated by the device and the internal fast avalanche multiplication process, its output electrical signal is often used as a high-precision timing signal for various visible light pulses. Existing technologies such as: photon time-of-flight measurement equipment (Timeof Flight) are based on this principle, such as time-of-flight positron emission tomography ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/44G01T1/24
CPCG01J1/44G01T1/247G01T1/248G01T1/249G01J2001/4453G01J2001/442
Inventor 沈炜
Owner 杭州宇称电子技术有限公司