A High Precision Timing Silicon Photomultiplier Diode System Resistant to Signal Buildup
A diode and silicon photoelectric technology, applied in the field of photodetectors, can solve problems such as complex system design and degraded timing accuracy, and achieve the effects of reducing signal connections, solving accumulation and baseline fluctuations
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[0022] Such as figure 2 As shown, the implementation of the high-precision timing silicon photomultiplier diode module that is resistant to signal pile-up is shown, figure 2 The left side of the middle is the equivalent circuit structure of a silicon photomultiplier diode detector. Several diodes are connected in series with their respective avalanche quenching resistors R q and parasitic capacitance C q A number of diode pixels are formed, and the diode pixels can be used with a voltage source, an on-resistance R p , avalanche switch and diode capacitance equivalent C p Equivalently, each pixel is an avalanche diode, and a resistor R is connected in series q Used to quench the avalanche of the diode, this avalanche diode is added with a resistor R q To form a pixel, the entire device is composed of thousands of pixels connected in parallel, and other pixels that are not avalanche can be considered as connected in parallel, and their electrical models are converted into ...
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