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Broadband low-dispersion camera lens

A low-dispersion, wide-band technology, applied in the optical field, can solve problems such as inability to measure, loss of accuracy, and speed reduction, and achieve the effects of improving measurement accuracy and measurement speed, broadening the measurement range of equipment, and reducing energy loss.

Active Publication Date: 2020-07-28
匠岭科技(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the spectral range of domestic ellipsometry equipment is mostly concentrated in the near-ultraviolet to near-infrared band (350nm-800nm), and the measurement spot is larger than 45um. If you want to test thinner or smaller etching patterns, you cannot measure them.
The current solution generally uses multi-optical system for separate measurement, but there are disadvantages such as loss of accuracy, speed reduction, complex system structure, poor stability and cost increase.

Method used

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  • Broadband low-dispersion camera lens
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  • Broadband low-dispersion camera lens

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Such as figure 1 As shown, in an infinity embodiment of the present invention, the shape of the lens is bullet-shaped, with a fixed thread at the tail, a total mechanical length of 36mm, and a mechanical outer diameter of 15mm. When installing, the second correction lens group L 3 , the first correction lens group L 2 and the constraining lens L 1 Install at the end in order, with a spacer in the middle, and fix the end with a pressure ring.

[0040] figure 2 , Figure 8 Shown is the internal structure of the lens of the infinity embodiment of the present invention. see figure 2 And the following Table 1, the design parameters of the lens are shown in Table 1, the first lens group of the lens constrains the lens L1 to be arranged sequentially from left to right, the focal length of the lens is defined as f, and the maximum outer diameter of the lens is 6.0mm.

[0041] Table 1 lens parameters

[0042] face number Radius of curvature R Thickness - ...

Embodiment 2

[0046] Figure 5 Shown is the outline structure diagram of the finite telephoto lens of the present invention. The shape structure is the same as the infinite structure.

[0047] Figure 6 Shown is the internal structure of the finite-distance embodiment lens of the present invention. see Figure 6 And the following table 2, the lens design parameters of this lens are shown in table 2, the first lens group of this lens is arranged in order from left to right, and the finite distance from the incident end to the lens group constrains the lens L 1 The design value is 300mm, the focal length of the lens is defined as f, and the maximum outer diameter of the lens is 6.0mm.

[0048] Table 2 lens parameters

[0049] face number Radius of curvature R Thickness - Spacing H Semi diameter D / 2 glass material S1 (aperture) 0.52f 0.34f 2.8 Caf2 S2 -0.27f 0.015f 2.3 / S3 -0.22f 0.22f 2.2 F_silica S4 0.24f 0.015f 2.0 / S5 0.22f ...

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Abstract

The invention discloses a broadband low-dispersion camera lens. The broadband low-dispersion camera lens comprises a field-of-view light beam constraint lens L1, a first correction lens group L2 and asecond correction lens group L3 which are sequentially arranged from an object side to an image side; the first correction lens L2 and the second correction lens group L3 are used for correcting chromatic aberration and light spot size on an axis and controlling working distances. The working wavelength of the camera lens ranges from 210nm to 900nm and covers wavebands from the deep ultraviolet wave band to the near infrared waveband; paraxial dispersion spots are optimized to be within the range of airy discs, and at the same time, the number of the lenses of the camera lens is reduced, andchromatic aberration is reduced.

Description

technical field [0001] The invention relates to the field of optics, in particular to a semiconductor measuring device based on the principles of optical reflection, optical scattering and optical ellipsometry. Background technique [0002] In 1947, the birth of the first transistor marked the beginning of the semiconductor industry. Since then, the design, manufacture, testing and application of semiconductors have become more and more extensive. From the initial wafer growth to the later chip packaging, measurement equipment is an indispensable part of the semiconductor industry chain. [0003] At present, the core and key technologies of semiconductor measurement equipment are mainly in the hands of a few large foreign equipment manufacturers, and domestic industrial development relies heavily on imported equipment. Then, the development of semiconductor measurement equipment with independent intellectual property rights has become a rapidly developing high-tech industry ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B13/00G02B1/02G02B1/00
CPCG02B13/0015G02B1/02G02B1/00
Inventor 叶薇薇高海军张运波
Owner 匠岭科技(上海)有限公司