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Semiconductor package and method for producing same

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as uneven surface pressure and inability to perform uniform heat dissipation, and achieve the effect of improving productivity

Pending Publication Date: 2020-08-04
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if this structure is adopted, a step will be generated on the back surface of the heat sink opposite to the mounting surface of the semiconductor chip, and when the heat sink is bonded to the air-cooled fins or the like as the final heat dissipation member, the coating on the heat radiation will be affected. The surface pressure applied by the thermal grease on the back of the chip becomes uneven, and uniform heat dissipation may not be possible.

Method used

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  • Semiconductor package and method for producing same
  • Semiconductor package and method for producing same
  • Semiconductor package and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0038]

[0039] figure 1 It is a cross-sectional view showing the structure of the semiconductor package 100 in Embodiment 1 according to the present invention. Such as figure 1 As shown, in the semiconductor package 100, the principal surfaces of the semiconductor chip 11 (first semiconductor chip) and the semiconductor chip 12 (second semiconductor chip) are die-bonded to tubes of the heat sink 3 (radiation member) via the bonding layer 2, respectively. On core joints 21 and 22 (first and second joints).

[0040] The active surfaces of the semiconductor chips 11 and 12, which are the main surfaces opposite to the main surface on which the die is bonded to the bonding layer 2, are respectively flip-chip mounted on the first main surface (upper surface) of the interposer 5 which is an insulating substrate. A plurality of inner bumps 41 on the surface). In addition, a plurality of outer bumps 42 are provided on the second main surface (lower surface) of the interposer subs...

Deformed example 1

[0085] In the semiconductor package 100 of Embodiment 1 described above, a stepped structure having a difference in height between the two die-bonding parts of the heat sink 3 is used to cope with the semiconductor chips 11 and 12 having different thicknesses. Different semiconductor chips use bumps of different sizes and can also cope with differences in thickness.

[0086] That is, if Figure 11 As in the shown semiconductor package 100A, the semiconductor chip 11 with a thickness of 0.4 mm is bonded to the inner bump 411 (bonding material) with a diameter of 0.3 mm, and the semiconductor chip 12 with a thickness of 0.2 mm is bonded to the inner bump 412 with a diameter of 0.5 mm. (bonding material), the heat sink 3A in which the die-bonding portions 21 and 22 each have a thickness of 2 mm can be used. By using bumps with different diameters, that is, different heights, there is no need to provide a height difference between the two die-bonding parts, so it is possible to u...

Deformed example 2

[0089] In the semiconductor package 100 according to Embodiment 1, the height of the gap between the heat sink 3 and the interposer 5 is determined by the height of the inner bumps 41 arranged on the interposer 5, but it is also possible to provide a device for setting the gap length. support body.

[0090] That is, it can also be used as Figure 12 Like the illustrated semiconductor package 100B, a protrusion 33 extending from between the die-bonding portion 21 and the die-bonding portion 22 of the heat sink 3B toward the interposer substrate 5 side is provided, and its tip is in contact with the main surface of the interposer substrate 5 . , and is bonded to the interposer substrate 5 by using the bonding portion 413 of solder or resin.

[0091] By providing the protruding portion 33 , the height of the protruding portion 33 can be used to more accurately set the length of the gap between the heat sink 3B and the interposer substrate 5 . In addition, by providing a portion...

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Abstract

The present invention relates to a semiconductor package and comprises: an insulating substrate; a first semiconductor chip which has an active surface that is bonded onto a first main surface of theinsulating substrate, with a plurality of first bonding materials being interposed therebetween; a second semiconductor chip which has an active surface that is bonded onto the first main surface, with a plurality of second bonding materials being interposed therebetween, and which has a thinner thickness than the first semiconductor chip; a heat dissipation member that has a lower surface to which main surfaces of the first semiconductor chip and the second semiconductor chip are bonded, said main surfaces being on the reverse side of the respective active surfaces of the semiconductor chips;and a sealing resin which seals the first and second semiconductor chips on the insulating substrate, while being in contact with at least a part of the lateral wall of the heat dissipation member without riding up on the upper surface of the heat dissipation member. With respect to the heat dissipation member, the thickness of a first bonding part to which the first semiconductor chip is bondedis thinner than the thickness of a second bonding part to which the second semiconductor chip is bonded.

Description

technical field [0001] The present invention relates to a semiconductor package, and more particularly to a semiconductor package having a heat dissipation member for dissipating heat generated from a semiconductor device. Background technique [0002] With the increase in frequency and speed of operation of semiconductor devices, there is a tendency for the heat generated from semiconductor devices to increase, and a heat spreader is popularized as a heat dissipation member for dissipating the heat to the outside. A semiconductor package with a structure in which it is in contact with the main surface of the semiconductor chip. As an example, patent document 1 is mentioned. [0003] In addition, in a multi-chip package having multiple types of chip-shaped semiconductor devices (semiconductor chips), when the heights of the heat sinks that are in contact with the main surfaces of the respective semiconductor chips are different due to the difference in thickness of the semi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/29H01L21/56H01L23/28H01L23/31H01L23/36
CPCH01L21/56H01L2924/15311H01L2224/16225H01L2224/73253H01L23/4334H01L23/49816H01L23/24H01L21/561H01L23/295H01L23/3128H01L25/0655H01L2224/32245H01L2224/95H01L2224/83192H01L2224/92242H01L2224/81192H01L24/16H01L24/32H01L24/92H01L25/18H01L2224/13116H01L2224/81447H01L2224/81444H01L2224/1312H01L2224/13139H01L2224/13147H01L2224/13111H01L2224/13144H01L2224/2919H01L2224/83H01L2224/81H01L2924/014H01L2924/01079H01L2924/00014H01L2924/01082H01L2924/0105H01L21/4882H01L21/565H01L23/367H01L25/0753H01L25/042H01L2224/26175
Inventor 藤野纯司坂元创一宫脇胜巳一户洋晓
Owner MITSUBISHI ELECTRIC CORP