Technological method for improving recoverability of silicon wafer through adoption of high-temperature wet oxygen oxidation method

Abstract

The invention provides a technological method for improving the recoverability of a silicon wafer through adoption of a high-temperature wet oxygen oxidation method, and the method comprises the steps: providing a to-be-recovered silicon wafer, and enabling a SiCN film layer to exist on the silicon wafer; placing the silicon wafer in a high-temperature wet-oxygen environment for thermal oxidationtreatment until the SiCN film layer is completely oxidized into SiOCN; and removing SiOCN on the silicon wafer by using the wet etching process of acid pickling. According to the process method adopted by the invention, thermal oxidation treatment is carried out on the to-be-recycled silicon wafer in a high-temperature wet-oxygen environment; according to the method, the SiCN and other film layersare completely oxidized into SiOCN, then the SiOCN is completely removed through the wet etching process of acid pickling, finally, high-efficiency recycling of the silicon wafer containing the SiCNand other film layers is achieved, the recycling frequency of the silicon wafer is increased, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a process method for improving the recyclability of silicon wafers through high-temperature wet oxygen oxidation. Background technique [0002] Silicon carbon nitride (SiCN) thin film is a new type of functional thin film material, which is often used as a gate sidewall (offset spacer) in the field of integrated circuit manufacturing technology. It is difficult to directly remove SiCN film by etching process, which affects the recycling and reuse of silicon wafers containing SiCN film. [0003] Due to the characteristics of high hardness and good corrosion resistance of SiCN, chemical mechanical grinding or ion etching are often used to directly remove SiCN film, but chemical mechanical grinding and ion etching are both single-chip and single-sided operations. For SiCN-containing films In terms of the recycling and reuse of silicon wafers, there are problems of low effici...

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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of process method that improves the recyclability of silicon wafer by high temperature wet oxygen oxidation method, is used to solve the silicon wafer that reclaims in the prior art due to its SiCN film layer Difficult to be removed in traditional wet etching process, resulting in low recovery efficiency

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