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Polymer, organic film composition, and method for forming pattern

A technology of polymer and composition, which is applied in photomechanical equipment, patterned surface photoengraving process, photosensitive material used in optomechanical equipment, etc. Reduce solubility and other issues to ensure solubility and storage stability

Active Publication Date: 2020-08-14
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, since the resin does not dissolve due to reduced solubility in solvents mainly used for semiconductors, the hard mask composition may be difficult to coat in a spin coating method
To solve this problem, another solvent with better solubility has conventionally been proposed, but the solvent may have bad smell or deteriorate coating uniformity
Also, when the carbon content is reduced to increase solubility, there is a problem of reduced etch resistance

Method used

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  • Polymer, organic film composition, and method for forming pattern
  • Polymer, organic film composition, and method for forming pattern
  • Polymer, organic film composition, and method for forming pattern

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0126] 50 grams (0.43 moles) of indole, 34.1 grams (0.21 moles) of 1-naphthaldehyde (1-naphthaaldehyde), 38.5 grams (0.49 moles) of 9-fluorenone (9-fluorenone) and 24.4 grams (0.14 moles) of p-toluene Sulfonic acid (p-toluenesulfonic acid) was added to 180 grams of 1,4-dioxane in a 500 milliliter two-necked flask equipped with a mechanical stirrer and a cooling tube, and the resulting mixture was stirred and then the temperature of the flask was raised to After reaching 110°C, the mixture was stirred for 17 hours. When the reaction was complete, the inner temperature of the flask was lowered to 60°C to 70°C, 300 g of tetrahydrofuran was added to the flask to prevent hardening of the compound, and the pH of the compound was adjusted to 5 to 6 with 7% aqueous sodium bicarbonate. Then, 1000 ml of ethyl acetate was poured into the flask and the resulting mixture was continuously stirred, and the mixture was processed through a separatory funnel to extract only the organic layer. ...

Synthetic example 2

[0131] A polymer including a structural unit represented by Chemical Formula 2a was obtained according to the same method as Synthesis Example 1 except that 1-pyrenecarboxaldehyde was used instead of 1-naphthaldehyde.

[0132] The weight average molecular weight (Mw) of the polymer was 1,445, and the polydispersity (PD) of the polymer was 1.28.

[0133] [chemical formula 2a]

[0134]

Synthetic example 3

[0136] A polymer including a structural unit represented by Chemical Formula 3a was obtained according to the same method as Synthesis Example 2 except that 1H-benzo[g]indole was used instead of indole.

[0137] The weight average molecular weight (Mw) of the polymer was 1,710, and the polydispersity (PD) of the polymer was 1.31.

[0138] [chemical formula 3a]

[0139]

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Abstract

The present invention relates to: a polymer comprising a structural unit represented by the following chemical formula 1 and a structural unit represented by the following chemical formula 2 or 3; anorganic film composition comprising the polymer; and a method for forming a pattern by using the organic film composition. The definitions of chemical formulas 1-3 are the same as those described in the specification.

Description

technical field [0001] The present disclosure relates to a novel polymer, an organic layer composition including the polymer, and a method of forming a pattern using the organic layer composition. Background technique [0002] Recently, the semiconductor industry has developed to an ultra-fine technology with patterns in the size of several nanometers to tens of nanometers. Such ultra-fine technology essentially requires effective lithographic techniques. [0003] A typical lithography technique includes: providing a material layer on a semiconductor substrate; coating a photoresist layer thereon; exposing and developing the photoresist layer to provide a photoresist pattern; and using The photoresist pattern is used as a mask to etch the material layer. [0004] Currently, according to the miniaturization of patterns to be formed, it is difficult to provide fine patterns with excellent outlines only by the above-mentioned typical lithography techniques. Therefore, a laye...

Claims

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Application Information

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IPC IPC(8): C08G61/12C09D183/04G03F7/11G03F7/09H01L21/027H01L21/033
CPCC08G61/12C09D183/04G03F7/09G03F7/11H01L21/027H01L21/033C08G61/124G03F7/091H01L21/0274H01L21/0337
Inventor 郑铉日金瑆焕金昇炫朴裕信朴惟廷辛乘旭林栽范
Owner SAMSUNG SDI CO LTD
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