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Semiconductor structure and forming method thereof, and semiconductor device

A technology of semiconductor and device area, applied in the field of semiconductor structure and its formation method, and semiconductor device field, can solve the problems of difficult channel and poor control ability of gate structure to channel, and achieve the effect of large etching amount

Active Publication Date: 2020-09-04
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The difficulty of the channel is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur

Method used

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  • Semiconductor structure and forming method thereof, and semiconductor device
  • Semiconductor structure and forming method thereof, and semiconductor device
  • Semiconductor structure and forming method thereof, and semiconductor device

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Embodiment Construction

[0014] With the development of technology in the field of semiconductor manufacturing, a new method is urgently needed to form grooves with different depths in the substrate to meet the process requirements.

[0015] In order to solve the technical problem, in the embodiment of the present invention, in the step of etching the etching buffer layer and the partial thickness of the substrate in the same step, the substrate in the first region can only be processed after removing the etching buffer layer. performing etching, the substrate of the second region is etched for a longer period of time and the amount of etching is larger than that of the substrate of the first region, thereby forming a first substrate in the remaining substrate of the first region After the second groove is formed in the remaining substrate of the second region, the depth of the first groove is smaller than the depth of the second groove, so that the groove formed in the substrate can have different de...

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Abstract

The invention provides a semiconductor structure and a forming method thereof, and a semiconductor device. The forming method comprises the steps: providing a substrate comprising first regions and second regions located between the adjacent first regions; forming a plurality of discrete first hard mask layers on the substrate and sacrificial side walls located on the side walls of the first hardmask layers, wherein openings are defined by the adjacent sacrificial side walls and the substrate; forming a second hard mask layer filled in the opening; after the second hard mask layer is formed,removing the sacrificial side wall of the second region, and reserving the residual sacrificial side wall of the first region as an etching buffer layer; and by taking the first hard mask layer and the second hard mask layer as masks, etching the buffer layer and a part of the thickness of the substrate in the same step, forming a first groove in the remaining substrate of the first region, and forming a second groove in the remaining substrate of the second region, wherein the depth of the first groove is smaller than that of the second groove. According to the embodiment of the invention, through the etching buffer layer, the requirement that the grooves formed in the substrate have different depths is met.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure, a method for forming the same, and a semiconductor device. Background technique [0002] In semiconductor manufacturing, with the development trend of ultra-large-scale integrated circuits, the feature size of integrated circuits continues to decrease. In order to adapt to smaller feature sizes, metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor , MOSFET) channel length has been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The channel becomes more and more difficult, making subthreshold leakage (subthreshold leakage), the so-called s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/336H01L29/78
CPCH01L29/785H01L29/66795H01L29/0684H01L29/0642
Inventor 张海洋蒋鑫
Owner SEMICON MFG INT (SHANGHAI) CORP
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