DFN packaged digital infrared temperature sensor
An infrared temperature and sensor technology, applied in the direction of instruments, measuring devices, scientific instruments, etc., can solve the problems of unfavorable product promotion and application, large volume of TO packaging, high heat insulation requirements, etc., and achieve good electromagnetic shielding function, large thermal resistance, The effect of reducing the rate of heat loss
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Embodiment 1
[0032] The digital infrared temperature sensor of DFN package of the present invention comprises: DFN package housing 1; Infrared filter 2; Air induction hole 3; Exhaust hole 4; TC module 5; .
[0033] see figure 1 and figure 2 , in order to reduce the volume of the digital infrared temperature sensor of the DFN package as much as possible, a micro thermopile is selected as the temperature sensitive device, and it is packaged inside the sensor, and its function is to convert the infrared radiation energy into an electrical signal; the infrared filter The wavelength passband of sheet 2 is 2-14 μm, which realizes the filtering of interfering light; the TC module 5 can adopt a metal thermal resistor, a PTC thermistor or an NTC thermistor to monitor the temperature of the cold end of the thermopile. Compensation to obtain the real-time temperature of the target to be measured; the ASIC module can supply power to the NTC thermistor, and can process the analog signals of the ther...
Embodiment 2
[0036] see figure 2 , the further design of this example is that the package is a plastic DFN package, and five pins are installed on the bottom of the package, which are SDA, VDD, GND, SCL, and ADDR. The function of the SDA is the I2C data line; VDD is the power supply terminal; GND is the ground terminal; SCL is the I2C clock line; ADDR is the LSB port of the I2C.
Embodiment 3
[0038] see image 3 The further design of this example lies in that, by coating the inner wall of the package with a shielding layer and a heat insulating layer, the electromagnetic shielding effectiveness of the infrared temperature sensor is improved, the short circuit of the connecting wire is prevented, the heat loss rate is reduced, and the detection accuracy is improved. On the inner wall of the DFN package shell 301, the shielding layer is Cu / Ni plating layer 303 and Cu / Ni plating layer 303 and SiO 2 The thin film 302, wherein the thickness of the copper plating layer is 0.5-3.8 μm, and the thickness of the nickel plating layer is 0.2-0.5 μm. The insulation layer is made of SiO 2 Thin film 302, SiO 2 The film thickness is 500 nm or 1 μm.
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