Semiconductor device and electric contact structure and manufacturing method thereof

Abstract

The invention provides a semiconductor device and an electric contact structure and a manufacturing method thereof. At least a first contact plug closest to a peripheral region in a core region is formed above an isolation structure at the junction of the core region and the peripheral region and is in contact with the isolation structure; the bottom of the first contact plug can be completely overlapped on the isolation structure; or, a part of the bottom is overlapped with the isolation structure; the bottom of the other part is overlapped with the active region close to the core region of the isolation structure; and even the top of the first contact plug is at least connected with the top of the contact plug close to the upper part of the active region of the core region of the isolation structure, so that the electrical structure originally formed on the outermost side of the boundary of the core region can be at least partially formed above the isolation structure at the junction, the consistency of the electrical structure above the contact plug in the core region is ensured, and the performance of the electrical structure on the boundary of the core region is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and its electrical contact structure and manufacturing method. Background technique [0002] Various techniques have been used to integrate more circuit patterns in a limited area of ​​a semiconductor substrate or wafer. Due to the difference in circuit pattern spacing, integrated circuits are generally divided into device-dense areas (Dense), device-sparse areas (ISO) and device-isolated areas. It is an area where the device density is low (that is, the devices are relatively sparse), and the device isolated area is an area where relatively sparse areas and dense areas are set separately. As the critical dimensions of semiconductor devices continue to decrease, the density of circuit patterns and / or device heights continue to increase, subject to the resolution limit of the optical exposure tool and the density difference between device-dense regio...

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a semiconductor device and its electrical contact structure and manufacturing method, to solve the problem of the core area boundary caused by the optical proximity effect and the dense / sparse effect of circuit patterns in existing semiconductor devices such as dynamic random access memories. Problems such as abnormal electrical structure connected to the outermost contact plug to improve device performance

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