A Resonator-Based Etching Endpoint Detection System and Method

Abstract

A resonator-based etching endpoint detection system and method, including a coupled beam resonator and a temperature compensation sensor placed in the etching chamber of an etching machine at the same time, and the etching signal of the coupled beam resonator and the temperature compensation sensor The data acquisition is completed through a closed-loop oscillator circuit respectively, and the two closed-loop oscillator circuits send the etching signal data to the host computer for data processing, and display it graphically through the host computer, and the etching signal data of the host computer and the etching machine are shared The coupled beam resonator includes a connecting rod. The two ends of the connecting rod are respectively connected to the inner side of the middle part of the resonant beam. The upper and lower ends of the resonant beam are fixedly supported by anchor points. The outer end of the device is fixed by anchor points; there are etched square plates hanging on both sides of the middle of the connecting rod, and the etched square plates are used as etching areas; the detection system of the present invention has the advantages of simple structure, low cost, high detection accuracy, and can accurately control Silicon, silicon oxide and other etching depth and other advantages.

Description

technical field [0001] The invention belongs to the technical field of micromechanical electronics (MEMS) on-line monitoring systems, and in particular relates to a resonator-based etching end point detection system and method. Background technique [0002] Inductively coupled plasma etching is an important micro-nano processing technology. Its function is to use high-density plasma to transfer photoresist patterns to functional films. An important parameter for inductively coupled plasma etching to realize pattern transfer is highly accurate etching depth. If the etching depth cannot meet the design requirements, it will directly lead to the termination of the micro-nano processing process. The disadvantage of the traditional ICP etching system is that there is no etching endpoint detection function. The etch depth is determined by the product of the etch rate and the etch time. It has strict requirements on the stability of the equipment rate, but there are many factors t...

AI Technical Summary

Problems solved by technology

Disadvantages of this method: 1. The influence of etching pattern feature size and etching rate is not considered

2. Not universal, because not all materials can be deposited on electrodes

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