Method for formation of patterned solder mask layer, method for manufacturing printed circuit board and/or electrical component, and article
A technology for printed circuit boards and electrical components, applied in the field of chemical vapor deposition to form a patterned protective layer
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Embodiment 1
[0058] Embodiment 1, base 11 is made of trimethylaluminum (TMA, Al(CH 3 ) 3 ) and formed on water as an alumina layer (Al 2 o 3 ) mask 10 provided. Deposition temperatures range from about 20°C (room temperature) to about 300°C.
Embodiment 2
[0059] Embodiment 2, on substrate 11 by titanium tetrachloride (TiCl ) and water deposition as titanium dioxide layer (TiO 2 ) mask 10 provided. Deposition temperatures range from about 20°C (room temperature) to about 300°C.
Embodiment 3
[0060] Embodiment 3, on substrate 11 by niobium ethoxide (Nb 2 (OC 2 h 5 ) 10 ) and water deposited as niobium dioxide layer (Ni 2 o 5 ) mask 10 provided. Deposition is possible at least in the range of 90°C to 150°C.
[0061] In all examples, the layers produced in a single ALD cycle (pulsed first precursor-purge; pulsed second precursor-purge) were approximately 0.1 nm. In order to deposit a layer with a thickness of 10-100 nm, the above reaction (cycle) is repeated a predetermined number of times. Depending on the number of cycles desired and the duration of each cycle, the deposition process can be accomplished within a time range of about 10 minutes to about 20 hours.
[0062] For the purposes of the present invention, the mask 10 is preferably deposited as a layer having a thickness in the range 10-500 nm, preferably in the range 20-200 nm, more preferably in the range 50-200 nm, eg 100 nm.
[0063] In a similar manner, mask 10 may be built from three or more pre...
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