Driving circuit applied to insulated gate bipolar transistor (IGBT)

A technology of bipolar transistors and drive circuits, applied in electrical components, electronic switches, pulse technology, etc., can solve the problems of IGBT turn-on influence, large turn-on loss, and long IGBT turn-on time, so as to achieve optimal control and reduce turn-on time and switching loss effect

Pending Publication Date: 2020-09-22
SHANGHAI ELECTRICGROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The present invention provides a driving circuit applied to an insulated gate bipolar transistor IGBT, which is used to solve the problem of long turn-on time and large turn-on loss of the existing IGBT,

Method used

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  • Driving circuit applied to insulated gate bipolar transistor (IGBT)
  • Driving circuit applied to insulated gate bipolar transistor (IGBT)
  • Driving circuit applied to insulated gate bipolar transistor (IGBT)

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0094] As an optional implementation manner, the driving circuit further includes:

[0095] Equivalent inductance detection circuit, connected to the emitter and collector of the IGBT, used to detect the equivalent stray inductance L of the conductor in the IGBT S .

[0096] Because the emitter stray inductance Ls in series with the parasitic inductance is easier to measure (Ls can be measured by a double pulse test), so as long as the voltage drop on the stray inductance is close to 0 (or the voltage drop is small), then It can be known that the IGBT in the turn-on process is at i C The current rising phase is still i C Unchanging stage. Then, according to the different stages in the IGBT turn-on process, the charge and discharge speed of the parasitic capacitance inside the IGBT is controlled to achieve soft turn-on of the IGBT and shorten the turn-on time of the IGBT.

[0097] First, the stray inductance Ls needs to be measured by the double pulse test. The double pulse test circ...

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Abstract

The invention provides a driving circuit applied to an insulated gate bipolar transistor (IGBT), which comprises a pulse source circuit, a first power amplification circuit and a second power amplification circuit, and is characterized in that the pulse source circuit is used for providing a pulse voltage for the first power amplification circuit and the second power amplification circuit; the first power amplification circuit is used for amplifying the pulse voltage by a first multiple and then inputting the pulse voltage into the grid electrode of the IGBT; and the second power amplificationcircuit is used for amplifying the pulse voltage by a second multiple and then inputting the pulse voltage to the grid electrode of the IGBT when the collector current of the IGBT is in the first stage and the third stage. By utilizing the driving circuit provided by the invention, the optimal control of the IGBT switching-on process can be realized, and the switching-on time and the switching loss of the IGBT are reduced by optimizing the states of the IGBT in different periods.

Description

technical field [0001] The invention relates to the field of driving circuits of semiconductor elements, in particular to a driving circuit applied to an insulated gate bipolar transistor IGBT. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a device composed of an insulated gate field effect transistor (MOSFET) and a bipolar junction transistor (BJT). BJT has two advantages of low conduction voltage drop, and it is the leading device of small and medium power power electronic equipment. It is suitable for the conversion system with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, and traction drives. and other fields. [0003] In order to realize various functions of the IGBT, it is necessary to design an IGBT drive circuit to process the signal of the control circuit (such as isolation transmission, level adjustment and power amplification, etc...

Claims

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Application Information

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IPC IPC(8): H03K17/567
CPCH03K17/567
Inventor 施源陈颖
Owner SHANGHAI ELECTRICGROUP CORP
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