Lateral double-diffused transistor and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductors, and provides a lateral double-diffused transistor and a manufacturing method thereof. The lateral double-diffusion transistor comprisesa straight channel part and a bent channel part, wherein the straight channel part comprises a straight channel drain end, a straight channel drift region, a straight channel source gate and a substrate, the straight channel source gate and the substrate are arranged on the two sides of the straight channel drain end, the straight channel drift region is arranged among the straight channel drain end, the straight channel source gate and the substrate, the bent channel part comprises a bent channel drain end, a bent channel source gate, a substrate, a bent channel drift region positioned amongthe bent channel drain end, the bent channel source gate and the substrate, and a plurality of bent channel doping strips, the bent channel drift region, the bent channel source gate and the substrateare of a semi-circular ring structure concentric with the bent channel drain end and are sequentially arranged on the periphery of the bent channel drain end, the bent channel doping strips are arranged in the bent channel drift region at intervals, and the extending direction of the center line of at least one bent channel doping strip coincides with the radius of the semi-circular ring structure of the bent channel part. According to the invention, charge balance can be realized to improve the breakdown voltage, and the source-drain on-resistance is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a lateral double-diffusion transistor and a manufacturing method thereof. Background technique [0002] As a type of power field effect transistor, laterally diffused MOS (Lateral Double-Diffused MOSFET, LDMOS) transistor has process compatibility, good thermal stability and frequency stability, high gain, low feedback capacitance and thermal resistance, and constant input impedance, etc. Excellent characteristics, so it has been widely used, and people have higher and higher performance requirements for LDMOS. [0003] The LDMOS device is a key component of the entire power integrated circuit, and its structural performance directly affects the performance of the power integrated circuit. The main parameters to measure the performance of LDMOS are on-resistance and breakdown voltage. The smaller the on-resistance, the better, and the larger the breakdown voltage, the bet...

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Problems solved by technology

However, due to the fan-shaped structure of the racetrack-shaped LDMOS structure, the width of the source end is much larger than the width of the drain end. In any angle range, there are more P-type impurities and less N-type impurities, and the charge in the N-type drift region 202 of the bend is Unbalanced, low breakdown voltage, low source-drain on-resistance

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