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BiTe-based thermoelectric material and preparation method thereof

A kind of thermoelectric material and thermoelectric technology, applied in the direction of thermoelectric device node lead-out materials, etc., can solve the problems of low conversion efficiency and expensive raw materials, achieve high density, short holding time, and prevent the effect of particle size growth

Pending Publication Date: 2020-10-02
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The inventors have found through long-term research that existing thermoelectric materials generally have the disadvantages of low conversion efficiency and expensive raw materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] With the purity (mass fraction) of 99.99% Bi elemental powder, Sb elemental powder, Te elemental powder and Mn elemental powder as raw materials, Bi 0.2 Sb 1.8 mn 0.05 Te 3 Put it into the zirconia ball mill jar, and add zirconia balls with diameters of 10mm, 6mm and 4mm, the ratio of ball to material is 10:1;

[0029] After vacuumizing the ball mill tank, fill it with high-purity argon (purity 99.99%) as a protective gas, and dry-mill it in a planetary ball mill at a speed of 400r / min for 10 hours;

[0030] The dry-milled material is added to the organic liquid medium absolute ethanol for wet milling, the wet milling speed is 350r / min, and the wet milling time is 60min;

[0031] After ball milling, the intermediate compound powder was taken out in the glove box (Ar atmosphere) and dried, and the dried intermediate compound powder was put into a graphite mold, compacted and then placed in a spark plasma sintering furnace. Under vacuum conditions, the pressure 50MPa,...

Embodiment 2

[0035] With a purity (mass fraction) of 99.99% Bi elemental powder, Sb elemental powder, Te elemental powder and Mn elemental powder as raw materials, Bi in moles 0.25 Sb 1.75 mn 0.04 Te 3 Put it into the zirconia ball mill jar, and add zirconia balls with diameters of 10mm, 6mm and 4mm, the ratio of ball to material is 20:1;

[0036] After vacuumizing the ball mill tank, fill it with high-purity argon (purity 99.99%) as a protective gas, and dry-mill it in a planetary ball mill at a speed of 450r / min for 8 hours;

[0037] The dry-milled material is added to the organic liquid medium absolute ethanol for wet milling, the wet milling speed is 300r / min, and the wet milling time is 90min;

[0038] After ball milling, the intermediate compound powder was taken out in the glove box (Ar atmosphere) and dried, and the dried intermediate compound powder was put into a graphite mold, compacted and then placed in a spark plasma sintering furnace. Under vacuum conditions, the pressure...

Embodiment 3

[0042] With a purity (mass fraction) of 99.99% Bi elemental powder, Sb elemental powder, Te elemental powder and Mn elemental powder as raw materials, Bi in moles 0.3 Sb 1.7 mn 0.04 Te 3 Put it into the zirconia ball mill jar, and add zirconia balls with diameters of 10mm, 6mm and 4mm, the ratio of ball to material is 20:1;

[0043] After vacuumizing the ball mill tank, fill it with high-purity argon (purity 99.99%) as a protective gas, and dry-mill it in a planetary ball mill at a speed of 400r / min for 10 hours;

[0044] Add the dry-milled material to an organic liquid medium absolute ethanol for wet milling, the wet milling speed is 350r / min, and the wet milling time is 60min; after ball milling, the intermediate compound powder is taken out in a glove box (Ar atmosphere) and dried. Put the dried intermediate compound powder into a graphite mold, compact it, and then place it in a spark plasma sintering furnace. Under vacuum conditions, the pressure is 60MPa, sintering at...

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Abstract

The invention provides a BiTe-based thermoelectric material for thermoelectric refrigeration for an electric power high-power device. The BiTe-based thermoelectric material comprises a BiTe-based thermoelectric layer, a BiTe-based thermoelectric layer and a BiTe-based thermoelectric layer, wherein the ratio of (Bi + Sb) : Te is 2 : 3, and Mn accounts for less than 1% of the total mole percentage of all the initial raw materials. The preparation method of the BiTe-based thermoelectric material for thermoelectric refrigeration of the electric power high-power device comprises the steps of ball milling, drying, sintering and annealing. According to the technical scheme provided by the invention, the ratio of the BiTe-based thermoelectric material and the matching among the Seebeck coefficient, the resistivity and the thermal conductivity are adjusted; the relative density of the BiTe-based thermoelectric material is 98.1%-99.3%, and the highest thermoelectric merit figure coefficient ZT of the BiTe-based thermoelectric material is 1.41-1.50 within the range from room temperature to 500 K.

Description

technical field [0001] The invention relates to a thermoelectric refrigeration material, in particular to a novel BiTe-based thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials have the Seebeck effect and its inverse effect, the Peltier effect. Thermoelectric refrigeration usually uses the Peltier effect of semiconductor materials to achieve refrigeration, also known as semiconductor refrigeration or Peltier refrigeration. Therefore, thermoelectric materials can realize electrical energy and thermal energy. Mutual conversion can be used for micro power supply or local high-efficiency cooling. Due to its unique refrigeration method, thermoelectric refrigeration has been developed rapidly in recent years, and it is a refrigeration method with broad application prospects. Thermoelectric coolers actively and efficiently absorb the waste heat generated by high-power devices to solve the heat dissipation problem of high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/547C04B35/622H01L35/16H10N10/852
CPCC04B35/547C04B35/622C04B2235/40C04B2235/42C04B2235/404C04B2235/602C04B2235/656C04B2235/6567C04B2235/662C04B2235/77C04B2235/9607C04B2235/6581C04B2235/666H10N10/852
Inventor 祝志祥陈新丁一陈保安张强刘晔马光聂京凯杨富尧程灵盛鹏徐丽陈云朱承治
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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