Infrared receiver

A technology of infrared receivers and adhesives, applied in the field of infrared receivers, can solve problems such as the signal-to-noise ratio that is susceptible to interference, and achieve the goal of improving the signal-to-noise ratio, improving the anti-interference ability and signal-to-noise ratio, and increasing the output amplitude Effect

CN111769163APending Publication Date: 2020-10-13杭州敏和光电子技术有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2020-10-13

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Abstract

The invention discloses an infrared receiver. The infrared receiver comprises a photosensitive diode chip, a triode chip, a resistor, a chip carrier and a packaging body. The photosensitive diode chip, the triode chip and the resistor are fixedly arranged at the top of the chip carrier. The packaging body surrounds the top of the chip carrier. The bottom of the chip carrier extends out of the packaging body and is provided with a control pin, a collector pin and an emitter pin, the photosensitive diode chip is electrically connected with the triode chip, the resistor is bridged between two electrodes of the photosensitive diode chip, and the triode chip is electrically connected with the control pin, the collector pin and the emitter pin respectively. The infrared receiver not only reserves the characteristics of large detection angle, high response speed and low temperature drift of the photosensitive diode, but also can realize signal amplification, is convenient to control, and hasthe advantages of short connection line between components, strong anti-interference capability and high signal-to-noise ratio.
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Description

technical field

[0001] The invention relates to the technical field of photosensitive electronic components, in particular to an infrared receiver. Background technique

[0002] Infrared photosensitive diodes are widely used as infrared detection units because of their large receiving angle, high response speed, and low temperature tickets. However, when the photosensitive diode detects a signal, it generates a current signal with a small amplitude, so the current signal needs to be converted into The voltage signal can only be provided to the control system after being amplified and processed.

[0003] Taking the infrared detection unit of the infrared touch screen as an example, the infrared detection unit is composed of a photodiode, a triode and an amplifier. The photodiode receives the infrared emission signal and generates a weak current signal, which is amplified by the triode and then flows through the resistance to convert it into a primary voltage signal. The ampl...

Examples

Embodiment 1

[0030] Such as figure 2 and image 3 As shown, the present embodiment provides an infrared receiver, which includes a photodiode chip 6, a triode chip 7 and a resistor 2, and also includes a substrate 8 and a package body 14. The package body 14 surrounds the top of the substrate 8, and the package body will be located on The photodiode chip 6, the triode chip 7 and the resistor 2 on the top of the substrate 8 are sealed together, the bottom of the substrate 8 is arranged outside the package body 14, and the bottom side of the substrate 8 is provided with a control pin 19, a collector pin 17 and an emission pin. Pole pin 18 and three external pins, photodiode chip 6 and triode chip 7 are electrically connected, resistor 2 is connected between the two electrodes of photodiode chip 6, and triode chip 7 is respectively connected to control pin 19, collector lead The pin 17 is electrically connected to the emitter pin 18 .

[0031] The substrate 8 is coated with a copper foil l...

Embodiment 2

[0044] Such as Figure 4 and Figure 5 As shown, the present embodiment adopts the lead frame 23 as the chip carrier, the photodiode chip 6, the triode chip 7 and the resistor 2 are fixed on the top of the lead frame 23, and the top of the lead frame 23 is also fixed with a PD base island for installing the photodiode 12. Install the TR base island 13 of the triode chip, the C bonding base island 24 and the D bonding base island 25 for bonding; the package body 14 surrounds the top of the lead frame 23, and the chips, base islands and bonding wires on the top are Seal together. The PD base island 12 extends outside the package body 14 to become the control pin 19, the TR base island 13 extends outside the package body 14 to become the collector pin 17, and the C bonding base The island 24 extends out of the package body 14 to become the emitter pin 18 .

[0045] The photodiode chip that can be used in this embodiment is a P substrate type photodiode chip or an N substrate t...