Unlock instant, AI-driven research and patent intelligence for your innovation.

Perovskite quantum dot with coating layer, 3D printing ink and preparation method of perovskite quantum dot

A 3D printing and perovskite technology, which is applied in the field of perovskite quantum dot preparation technology and 3D printing display, can solve the problems that the luminous efficiency and stability of perovskite quantum dots cannot be effectively maintained, and achieve enhanced stability and improved The effect of luminous efficiency

Pending Publication Date: 2020-10-16
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the luminous efficiency and stability of perovskite quantum dots cannot be effectively maintained.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Perovskite quantum dot with coating layer, 3D printing ink and preparation method of perovskite quantum dot
  • Perovskite quantum dot with coating layer, 3D printing ink and preparation method of perovskite quantum dot

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] see figure 2 , figure 2 The flow chart of the preparation of the perovskite quantum dot 100 with a coating layer provided in the embodiment of the present application. The embodiment of the present application also provides a method for preparing the above-mentioned perovskite quantum dot 100 with a coating layer, wherein the preparation method includes the following steps:

[0034] Step S1: Dispersing the perovskite quantum dots 110 in absolute ethanol solution to obtain a perovskite quantum dot dispersion;

[0035] Step S2: Adding a silicon-containing compound to the dispersion of perovskite quantum dots 110 under stirring to obtain a mixed solution, allowing the perovskite quantum dots 110 to react completely with the silicon-containing compound under alkaline conditions to obtain a surface Perovskite quantum dots 110 coated with at least one cladding layer 120 .

[0036] In the embodiment of the present application, the perovskite quantum dot dispersion liquid ...

example 3

[0046] As Example 3, the electroluminescent device includes: a transparent conductive electrode, an electron transport layer, a perovskite quantum dot light-emitting layer, a hole transport layer, and a metal electrode stacked sequentially from bottom to top.

[0047] As example four, the electroluminescent device may include: a transparent conductive electrode, an electron injection layer, an electron transport layer, a perovskite quantum dot light-emitting layer, a hole transport layer, a hole injection layer, and a metal electrode stacked sequentially from bottom to top .

example 5

[0048] As Example 5, the electroluminescent device may include: a transparent conductive electrode, a perovskite quantum dot light-emitting layer, and a metal electrode stacked sequentially from bottom to top.

[0049] Each of the above functional layers can be common materials in the field. When preparing the above electroluminescent device, 3D printing ink can be printed on the hole transport layer, the electron transport layer or the transparent conductive electrode.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a perovskite quantum dot with a coating layer, a 3D printing ink and a preparation method of the perovskite quantum dot, the perovskite quantum dot with the coating layer comprises a perovskite quantum dot and at least one coating layer coating the surface of the perovskite quantum dot, and the coating layer is made of a silicon-containing compound. The preparation method comprises the following steps: dispersing perovskite quantum dots in an absolute ethyl alcohol solution to obtain a perovskite quantum dot dispersion liquid; and adding the silicon-containing compoundinto the perovskite quantum dot dispersion liquid in a stirring state to obtain a mixed liquid, and enabling the perovskite quantum dots and the silicon-containing compound to react completely under an alkaline condition to obtain the perovskite quantum dots of which the surfaces are coated with at least one coating layer. The perovskite quantum dots are dispersed into plastic resin to obtain a 3Dprinting ink, and the 3D printing ink is further printed into a white-light LED with high luminous efficiency by using a 3D printing technology.

Description

technical field [0001] The present application relates to the field of perovskite quantum dot preparation technology and 3D printing display technology, and in particular to a thin film transistor perovskite quantum dot, 3D printing ink and a preparation method thereof. Background technique [0002] Quantum dot display technology (QLED), as the darling of display technology in the new era, has attracted much attention due to its advantages such as wide color gamut and high contrast. A variety of quantum dot materials have been developed simultaneously. Perovskite materials, as today's hot star materials, have excellent photoelectric properties, ultra-high fluorescence quantum yield and defect tolerance, and are expected to become a new generation of high-efficiency electrochemiluminescence materials. However, as an ionic semiconductor material, perovskite is limited by its special environmental sensitivity, and factors such as water vapor in the environment will affect the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/02C09D11/50C09D11/322
CPCC09K11/025C09D11/50C09D11/322
Inventor 张愉
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD