Process for manufacturing a silicon carbide coated body
A silicon carbide, process technology, used in susceptors and reactors, manufacturing products for high temperature applications, semiconductor materials and wafers, can solve problems affecting SiC and by-product formation
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Embodiment 1
[0571] Example 1 - Activation and Chlorination of Graphite Building Blocks, and Tendril Formation
[0572] The porous graphite member is activated, purified and subjected to the chlorination treatment described in the present invention.
[0573] The following chlorine contents were measured in the chlorinated graphite components:
[0574] element Graphite components Cl 0.06ppm wt.
[0575] and Figure 8a to Figure 8c compared to, Figure 7a to Figure 7c The formation of activated graphite with increased surface porosity is shown in . SEM has been prepared as described above.
[0576] In the CVD deposition method described here, a chlorinated graphite member is used as the porous graphite substrate (1).
[0577] In the CVD method, SiC tendrils (4) according to the invention are formed in the pores (6) of the correspondingly chlorinated graphite substrate, as figure 1 , figure 2 , image 3 , Figure 4 , Figure 5a , Figure 5b , Figure 6a a...
Embodiment 2
[0579] Example 2 - Effect of purge gas
[0580] Use H 2 A silicon carbide-coated body was produced by the process of the invention as a purge gas.
[0581] As a comparative example, argon was used as the purge gas.
[0582] as from figure 1 and Figure 4 It became apparent that the use of argon did not cause tendrils to form (4).
Embodiment 3
[0583] Example 3 - Multilayer SiC Coating
[0584] Silicon carbide coated bodies were prepared using the process of the present invention, wherein the amount of DMS was varied to produce multilayer SiC coatings with varying densities (2-A), (2-B), (2-C), etc.
[0585] where, in the deposition stage using H 2 The following amounts of DMS were introduced as carrier gas into the process chamber of the bench-scale test reactor:
[0586] deposition stage Amount of DMS 1. about 0.5g / min 2. About 1.0g / min 3. About 1.5g / min 4. About 2.0g / min
[0587] The SiC coatings deposited in the first to fourth deposition stages exhibited varying crystal sizes that increased with increasing amounts of DMS, resulting in SiC coatings with progressively decreasing densities.
[0588] figure 2 Another example showing SiC multilayer structures due to varying amounts of DMS is shown in .
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Abstract
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