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Optical proximity correction method

A technology of optical proximity correction and lithography, which is applied in optics, originals and instruments for opto-mechanical processing, etc., and can solve problems such as the inability to solve the accuracy of CD online control.

Pending Publication Date: 2020-10-20
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] Based on this, it is necessary to provide an optical proximity correction method for the problem that the traditional OPC method cannot solve the problem that the steps formed after multi-layer superposition affect the current CD online control accuracy

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Embodiment Construction

[0039] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0040] It should be noted that when an element is referred to as being “disposed on” another element, it may be directly on the other element or there may also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected t...

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Abstract

The invention relates to an optical proximity correction method. The method comprises: establishing an optical proximity correction simulation model; performing photoetching on the front-layer patterns with different sizes; collecting data and formulating a correction rule according to the data; and adjusting the pattern size of the photolithography mask according to the correction rule until thesize of the pattern formed after the pattern on the photolithography mask is transferred to the wafer is irrelevant to the size of the front-layer pattern, so as to improve the influence of the front-layer patterns with different sizes on the key size of the current layer, improve the consistency of the key size and stabilize the product performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an optical proximity correction method. Background technique [0002] The manufacturing technology of integrated circuits involves very complex processes, among which photolithography technology is a particularly important part of integrated circuit manufacturing technology, and the quality of photolithography technology directly determines the performance of chips. [0003] The photolithography process usually uses exposure and development to describe the geometrical pattern structure on the photoresist layer, and then transfers the pattern on the photomask to the substrate through the etching process. However, in the actual operation process, the size of the pattern etched on the substrate is inconsistent with the pattern on the photomask, the main reason is OPE (Optical Proximity Effect, Optical Proximity Effect). In order to eliminate the OPE, the OPC (Optical Proximi...

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Application Information

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IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 朱斌王谨恒陈洁张剑张斌
Owner CSMC TECH FAB2 CO LTD
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