A three-dimensional trench type ferroelectric memory and its preparation method

Abstract

A three-dimensional trench type ferroelectric memory and its preparation method, comprising a substrate (1) and a conductive layer (2) arranged on the substrate (1); the stacked structure arranged on the conductive layer (2) includes multiple layers horizontally and Stacked isolation layers (3) and control gate electrodes (4); a plurality of trench-type memory cell strings (5) vertically penetrate the stacked structure, including: vertically penetrate the stacked structure and the bottom of the groove is embedded with a conductive layer (2 ) in the groove hole (11); the side wall and groove bottom of the groove hole (11) are successively laid with a buffer layer (6), a ferroelectric film layer (7), a channel layer (8) and a filling layer (9 ); the control gate electrode (4), the buffer layer (6), the ferroelectric thin film layer (7), and the channel layer (8) form a plurality of ferroelectric field effect transistors connected in series. The ferroelectric memory of the invention can obtain more compact wiring, which is beneficial to realize higher density integration; the required materials can be deposited sequentially during preparation without etching, and the reliability of the ferroelectric memory can be guaranteed.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a three-dimensional trench type ferroelectric memory and a preparation method thereof. Background technique [0002] Transistor type ferroelectric memory - ferroelectric field effect transistor (FeFET) is to replace the gate dielectric layer in field effect transistor (MOSFET) with ferroelectric thin film material, and control the conduction of channel current by changing the polarization direction of ferroelectric thin film material Pass and cut off, so as to realize the storage of information. FeFET memory has the advantages of non-volatility, low power consumption, fast read and write speed, etc., and the unit structure is simple, and the theoretical storage density is large. Therefore, FeFET memory is considered to be one of the most potential new memory. [0003] However, for a long time, the actual storage density of FeFET memory is quite different from the theoretical val...

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