Flexible gallium arsenide solar cell and manufacturing method thereof

A solar cell and gallium arsenide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low yield, low specific power, and poor flexibility.

Inactive Publication Date: 2020-10-20
NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the deficiencies of the prior art. The present invention provides a flexible gallium arsenide solar cell and its manufacturing method to solve the problems of low specific power, poor flexibility, and low yield.

Method used

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  • Flexible gallium arsenide solar cell and manufacturing method thereof
  • Flexible gallium arsenide solar cell and manufacturing method thereof
  • Flexible gallium arsenide solar cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] See Figure 1-Figure 2 , A flexible gallium arsenide solar cell, including a bottom electrode 5 vapor-deposited on the bottom of a patterned PI substrate 4, a bonding metal 3 vaporized on the top of the patterned PI substrate 4, and the bonding metal 3 combines the PI film and the epitaxial layer 2 Bonding, the epitaxial layer 2 is a single-junction gallium arsenide solar cell or a multi-junction gallium arsenide solar cell grown upside down. Above the epitaxial layer 2 are the upper electrode 1 and the anti-reflection film 8. The upper electrode 1 is a rectangular strip , And arranged adjacent to the anti-reflection film 8.

[0039] The preparation method includes the following:

[0040] First, grow a gallium arsenide buffer layer, a GaInP or AlInP corrosion stop layer, a single-junction or multi-junction gallium arsenide solar cell, and a highly doped P-type contact layer on the gallium arsenide substrate in sequence;

[0041] Then, a metal contact layer and a bonding laye...

Embodiment 2

[0052] Such as Figure 4 Shown: The corroded shape is composed of n equal rectangular vertical bars (for example, 9 same rectangular vertical bars) and n-1 rectangular horizontal bars, and the middle of the long sides of the n same rectangular vertical bars pass through n-1 The rectangular horizontal bars are connected, and the short side length of the rectangular vertical bars is equal to the short side length of the rectangular horizontal bars, so that the patterned PI substrate 4 has the advantages of light weight, high thermal conductivity, and easy attachment. The rest is the same as in Embodiment 1.

Embodiment 3

[0054] Such as Figure 5 And as Image 6 As shown, the corroded shape can also be an irregular shape, such as an irregular arc or polygon, so that the patterned PI substrate 4 has the advantages of light weight, high thermal conductivity, and easy attachment. The rest is the same as in Embodiment 1.

[0055] The solar cell prepared in Example 1 was tested, and its specific parameters are shown in Table 2.

[0056] Table 2: Comparison table of photoelectric performance of flexible battery

[0057]

[0058] According to Table 2, the fill factor and conversion efficiency of the flexible battery produced by the patented process are improved, and the overall performance of the battery is better than that of the conventional process.

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Abstract

The invention relates to a flexible gallium arsenide solar cell and a manufacturing method thereof. The flexible gallium arsenide solar cell comprises a graphical PI substrate, a gallium arsenide epitaxial layer, an upper electrode and an antireflection film, wherein a lower electrode is evaporated at the bottom of the graphical PI substrate, bonding metal is evaporated above the graphical PI substrate and below the gallium arsenide epitaxial layer, and the PI thin film and the epitaxial layer are bonded through the bonding metal. The gallium arsenide epitaxial layer can be an inverted single-junction gallium arsenide solar cell or a multi-junction gallium arsenide solar cell. The metal electrode is arranged on the back surface of the flexible cell and can be directly attached to the surface of equipment for use, the subsequent packaging process is simplified, and the heat dissipation performance of the flexible gallium arsenide solar cell can be improved and the stability of a productis improved due to direct attachment to the surface of the equipment; by using the rigid transparent rigid temporary substrate, the conditions of high cost and high pollution caused by using galliumarsenide as the temporary substrate are reduced, and the risk of damaging the epitaxial layer when the temporary substrate is removed is reduced.

Description

Technical field [0001] The invention relates to the technical field of semiconductors, in particular to a flexible gallium arsenide solar cell and a manufacturing method thereof. Background technique [0002] In recent years, my country's solar cell technology has developed rapidly. Gallium arsenide solar cells have the advantages of high conversion efficiency and excellent reliability, and are widely used in space vehicles, such as navigation satellites, communication satellites, space stations, and space probes. The inverted structure of gallium arsenide solar cells can easily achieve band gap matching, which is an effective way to continuously improve the photoelectric performance of multi-junction gallium arsenide space solar cells. Especially inverted flexible battery, with its advantages of high power ratio, good flexibility, and high mechanical strength, it has become a key research object of domestic and foreign research institutions and enterprises. Polyimide film has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0392H01L31/0224H01L31/18
CPCH01L31/022425H01L31/03926H01L31/1852H01L31/1892Y02E10/544Y02P70/50
Inventor 徐培强张银桥潘彬王向武
Owner NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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