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Ultraviolet light emitting diode element structure and manufacturing method thereof

A light-emitting diode, ultraviolet light technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of light-emitting diode components output optical power attenuation is not significantly improved, low light extraction efficiency, etc.

Inactive Publication Date: 2020-10-23
江西新正耀光学研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the silicone oil can effectively conduct the heat generated by the light-emitting diode chip in the package to the surroundings, and then dissipate heat through the package body, quartz glass, etc. and improve the disadvantage of low light extraction efficiency caused by the difference in refractive index, However, the inventor of this patent found that the shortcoming of light-emitting diode element attenuation of the output light power of the light-emitting diode element has not been significantly improved when the light-emitting diode element using silicone oil alone works for a long time

Method used

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  • Ultraviolet light emitting diode element structure and manufacturing method thereof
  • Ultraviolet light emitting diode element structure and manufacturing method thereof
  • Ultraviolet light emitting diode element structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0073] Embodiment 1, with reference to image 3 : A kind of ultraviolet light emitting diode element structure that the present invention proposes, comprises:

[0074] A support portion; the support portion includes: a support 31; the positive electrode D1 and the negative electrode D2 are all arranged on the support 31; the support 31 can be an existing high thermal conductivity ceramic material of aluminum nitride or aluminum oxide production.

[0075] A dam 32 is arranged on the support 31 .

[0076] A light-transmitting portion, the light-transmitting portion includes a quartz glass cover plate 33, the quartz glass cover plate 33 is arranged on the end of the dam 32 away from the bracket 31, the quartz glass cover plate 33, the The dam 32 and the bracket 31 are enclosed to form an accommodation space S, and the accommodation space S is filled with silicone oil G;

[0077] At least one ultraviolet light emitting diode chip 1 is located in the accommodating space S and ar...

Embodiment 2

[0099] Example 2, combined with Figure 4 :

[0100] The transparent part includes a quartz glass tube 41 .

[0101] The support part includes:

[0102] A cover 42 is installed on the open end of the quartz glass tube 41, the cover is provided with a polytetrachlorethylene layer, and the cover 42 and the quartz glass tube 41 are enclosed to form an accommodation space S; The space S is filled with silicone oil G.

[0103] Both the positive electrode D1 and the negative electrode D2 are disposed on the cover.

[0104] A bracket 43 is located in the accommodating space S, and the bracket 43 is installed on the substrate 44. The bracket can be made of existing ceramic materials with high thermal conductivity such as aluminum nitride or aluminum oxide; the ultraviolet light emitting diode chip 1 is arranged on the support 43, and is electrically connected with the positive electrode D1 and the negative electrode D2; wherein,

[0105] The protective layer is provided between t...

Embodiment 3

[0109] Example 3, combined with Figure 5 :

[0110] The transparent part includes a quartz glass tube 51 .

[0111] The support part includes:

[0112] A cover 52 is installed on the open end of the quartz glass tube 51, the cover is provided with a polytetrachlorethylene layer, and the cover 52 and the quartz glass tube 51 are enclosed to form the accommodation space S ; The accommodating space S is filled with silicone oil G.

[0113] The positive electrode D1 and the negative electrode D2 are both arranged on the cover and electrically connected to the ultraviolet light emitting diode chip;

[0114] A substrate 54 is located in the accommodation space S, and a heat conduction layer is provided on the substrate; the ultraviolet light emitting diode chip 1 is arranged on the substrate 54; wherein,

[0115] The protective layer is disposed between the substrate 54 , the cover 52 and the silicone oil G.

[0116] Further, the protective layer 2 is SiO x thin film, the SiO...

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Abstract

The invention discloses an ultraviolet light emitting diode element structure and a manufacturing method thereof. The ultraviolet light emitting diode element structure comprises a supporting part, alight-transmitting part, at least one ultraviolet light emitting diode chip and a protective layer; the supporting part and the light-transmitting part are encircled to form an accommodating space, and the accommodating space is filled with silicone oil; the at least one ultraviolet light emitting diode chip is positioned in the accommodating space and is arranged on the supporting part; the protective layer is arranged on the surface and the side surface of the ultraviolet light emitting diode chip; and the protective layer is arranged between the supporting part and the silicone oil. The light extraction efficiency of the light-emitting diode chip can be improved, and the defect that the output light power of the light-emitting diode element is attenuated after the light-emitting diode element works for a long time can be obviously overcome.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a structure and a manufacturing method of an ultraviolet light-emitting diode element. Background technique [0002] Currently, the external quantum efficiency of deep ultraviolet light-emitting diodes with emission wavelengths ranging from 260 nm to 320 nm is about 1-3% and the electro-optical conversion efficiency is less than 4%. However, due to the lack of covering colloids that can effectively resist changes in chemical properties caused by irradiation in the deep ultraviolet light band, high light-transmitting quartz glass (refractive index close to 1.53) is used to replace the covering colloid as a protection for deep ultraviolet light emission. The diode chip does not interact with the air and moisture in the environment to cause unexpected failure or serious damage, and avoids qualitative changes and light absorption caused by the use of inappropriate cover...

Claims

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Application Information

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IPC IPC(8): H01L33/44H01L33/56H01L33/54H01L33/48
CPCH01L33/44H01L33/483H01L33/54H01L33/56H01L2933/0033
Inventor 蓝文新刘召忠林辉杨小利
Owner 江西新正耀光学研究院有限公司
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