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Film bulk acoustic resonator and preparation method thereof

A thin-film bulk acoustic wave and resonator technology, applied in electrical components, impedance networks, etc., can solve the problems of complex process and low firmness, and achieve the effects of high commercial value, poor acoustic impedance, and improved stability.

Pending Publication Date: 2020-10-23
SONGSHAN LAKE MATERIALS LAB
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this cavity-type FBAR has relatively low mechanical firmness, and the process is complicated

Method used

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  • Film bulk acoustic resonator and preparation method thereof
  • Film bulk acoustic resonator and preparation method thereof
  • Film bulk acoustic resonator and preparation method thereof

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Embodiment Construction

[0051] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary, and are only for explaining the present application, and should not be construed as limiting the present application.

[0052] In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer" etc. is based on the orientation or positional relationship shown in the drawings, or the The usual orientation or positional relationship of the application product when used is only for the convenience of describing the application and simplifying the description, rather than indicating or implying that the referred device or element ...

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Abstract

The invention discloses a film bulk acoustic resonator and a preparation method thereof, and relates to the technical field of film bulk acoustic resonators. The film bulk acoustic resonator comprisesa top electrode, a piezoelectric layer, a bottom electrode, a supporting layer, a cavity structure and a substrate which are sequentially arranged from top to bottom, wherein at least two supportingfilm layers and at least two air layers are arranged in the cavity structure. The acoustic impedance of the supporting film layers is larger than that of the air layers, each air layer and each supporting film layer are alternately overlapped from top to bottom, and any adjacent air layer and supporting film layer jointly form a Bragg sound wave reflecting layer. The mechanical stability of the cavity structure is effectively improved, and meanwhile the Q value of the film bulk acoustic resonator is effectively increased.

Description

technical field [0001] The present application relates to the technical field of thin film bulk acoustic resonators, in particular, to a thin film bulk acoustic resonator and a preparation method thereof. Background technique [0002] Film Bulk Acoustic Resonator (FBAR) is a new type of acoustic resonator device, which is mainly composed of upper and lower layers of metal electrodes and a piezoelectric film sandwiched in the middle. Its principle is to use piezoelectric materials to exchange electrical and mechanical energy. The characteristics of the conversion, by applying a high-frequency voltage to the electrodes, excite bulk acoustic waves in the piezoelectric material to achieve resonance. Compared with traditional surface acoustic wave filters (SAW) and dielectric filters, film bulk acoustic resonators have the advantages of small size, low power consumption, small insertion loss, and can be integrated on IC chips. At present, FBAR has been widely used in the field o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/13H03H9/17
CPCH03H3/02H03H9/02H03H9/02125H03H9/131H03H9/174H03H2003/023H03H2003/028H03H2009/02173
Inventor 左朋汪洋刘铮丁国建张宇超冯琦王海玲杨浩军徐文俊王晓晖贾海强陈弘
Owner SONGSHAN LAKE MATERIALS LAB
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