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A kind of method for preparing nanometer-sized metal thin film pattern
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A metal thin film, nano-sized technology, applied in the direction of nanotechnology, nanotechnology, photoplate making process coating equipment, etc., can solve the problems of unsuitable laser interference lithography, increase the difficulty of stripping, metal film burrs, etc., achieve low cost, Strong applicability and the effect of improving flatness
Active Publication Date: 2022-07-15
INST OF PHYSICS - CHINESE ACAD OF SCI
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[0003] Usually, the photoresist sidewall after development is in the shape of a positive mesa, and the material to be stripped will also be deposited on the sidewall, which increases the difficulty of stripping and causes problems such as burrs and warping of the stripped metal film.
The conventional solution is to use negative glue, reverse glue and double-layer glue to form inverted mesa patterns, but they are not suitable for laserinterference lithography, and these methods also face difficulties when the pattern size reaches the sub-micron level. big difficulty
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Embodiment 1
[0046] refer to figure 1 , a method for preparing a nano-sized patterned metal thin film, comprising the following steps:
[0050] The substrate was superwashed with acetone, alcohol and deionized water for 5 minutes in sequence to remove surface impurities. Then blow dry with nitrogen, and bake on a hot plate at 180°C for 5 minutes to remove the surface moisture and ensure the dryness of the substrate;
[0051] b. Spin-coat photoresist on the cleaned substrate:
[0052] Before spin-coating the photoresist on the substrate, you can also spin-coat a layer of adhesion promoter, drop 120 μL of the adhesion promoter in the center of the substrate and start the glue spinner immediately, the speed is 4000 rpm, and the duration is 30 seconds , then ...
Embodiment 2
[0062] It is basically the same as Example 1, with the following differences:
[0063] In step B, the thickness of the titanium film was 5 nm.
[0064] In step D, the time of oxygenion bombardment is 5 minutes, the power used is 20W, and the oxygen flow rate is 20sccm.
[0065] Figure 10 It is the atomic force microscope image of the substrate after removing the warped edge in this example. like Figure 10 As shown, the thickness of the metal film is about 5 nm, which basically eliminates edge warping.
Embodiment 3
[0067] It is basically the same as Example 1, with the following differences:
[0068] In step B, the thickness of the titanium film was 20 nm.
[0069] In step D, the bombardment time of oxygen ions is 5 minutes, the power used is 50W, and the oxygen flow rate is 50sccm.
[0070] Figure 11 It is the atomic force microscope image of the substrate after removing the warped edge in this example. like Figure 11 As shown, the thickness of the metal film is about 20 nm, and edge warping is completely eliminated.
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Abstract
The present invention provides a method for preparing a nano-sized metal film pattern, comprising the following steps: A. preparing a photoresist pattern on a substrate; B. depositing a metal film on the substrate covered with the photoresist pattern obtained in the step A , obtain the substrate deposited with the metal film; C. put the substrate deposited with the metal film obtained in the step B into the stripping solution, peel off the metal, and obtain a product with metal warped edges; D. put the step C The metal film portion of the obtained product in contact with the air is oxidized to obtain the product after the oxidation with the metal edge; E. the product after the oxidation with the metal edge obtained in the step D is put into the corrosive solution, with Remove metal warping. The preparation method of the invention has strong applicability, low cost and simple process, can completely eliminate edge warping in the metal stripping process, and improve the flatness of the metal film after stripping.
Description
technical field [0001] The invention belongs to the technical field of nanostructure preparation and application. Specifically, the present invention relates to a method for preparing nano-sized metal thin film patterns. Background technique [0002] The lift-off process is a method of preparing fine metal structures and is widely used in the fabrication of semiconductor devices. Compared with dry etching and wet etching techniques, it does not require expensive equipment, and there is no mechanical damage during pattern preparation. Moreover, the size of the metal pattern is completely determined by the pattern of the photoresist after development. [0003] Usually, the developed photoresist sidewall is in the shape of a positive mesa, and the material to be peeled will also be deposited on the sidewall, which increases the difficulty of peeling and causes problems such as burrs and warping of the peeled metal film. The conventional solution is to use negative glue, rever...
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