Preparation method and device of LED epitaxial wafer

Abstract

The invention relates to a preparation method and device of an LED epitaxial wafer. The method comprises the following step of applying a pressure which is opposite to the direction of a force capable of resulting in partial warping of a substrate to partial substrate during the process for heating the substrate to grow a single crystal film so as to control the substrate at a flat state. The method is carried out by means of fixed mechanism. The preparation method and device of an LED epitaxial wafer provided by the invention have the advantages that the warping phenomenon of sapphire wafers and the like substrates can be effectively removed at a high temperature, the substrate with a relatively small thickness can be directly applied to epitaxial growth, the substrate material is saved, the normal reduction and the like operations are prevented, the manufacture cost of LED epitaxial wafers is reduced greatly, and the production efficiency and the production yield of LED epitaxial wafer are effectively improved.

Description

technical field [0001] The invention relates to a method and a device for preparing an LED chip in the field of optoelectronic technology, in particular to a method and a device for preparing an LED epitaxial wafer. Background technique [0002] The third-generation semiconductor material GaN has the characteristics of wide bandgap, etc., and blue light and ultraviolet light with shorter wavelengths can be obtained through doping, thus creating a great opportunity for white LEDs to replace current traditional lamps such as incandescent lamps and spotlights and full-color large screens. condition. [0003] In the manufacturing process of GaN-based LEDs and other optoelectronic devices, GaN materials are generally produced by epitaxial growth on substrates such as sapphire wafers under high temperature conditions using MOCVD and other processes. However, common substrate materials, especially sapphire materials, have poor thermal conductivity. After heating, they will warp du...

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Problems solved by technology

But doing so will not only waste materials but also increase production costs

Further, because the substrate material usually has relatively high hardness (for example, the sapphire substrate has a Mohs hardness of up to 9), in order to be able to split and separate it, it is generally necessary to thin the substrate (with a 2-inch sapphire Take the substrate as an example, its thickness should be reduced to about 80-100μm), this thinning operation includes bonding, grinding, polishing, wax removal, cleaning and other processes, the operation is very complicated, the working hours are long, the equipment is expensive, and a large amount of Dust, and will lead to a significant reduction in the yield of the chip

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