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Semiconductor structure

A technology of semiconductor and gate structure, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as inability to apply substrates

Pending Publication Date: 2020-10-30
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method cannot be applied to various substrates

Method used

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  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

Examples

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Embodiment Construction

[0045] The following disclosure provides a number of embodiments or examples for implementing different elements of the provided semiconductor structures. Specific examples of each element and its configuration are described below to simplify the description of the embodiments of the present invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, if a description mentions that a first element is formed on a second element, it may include an embodiment in which the first and second elements are in direct contact, or may include an additional element formed between the first and second elements , so that they are not in direct contact with the example. In addition, the embodiments of the present invention may repeat reference numerals and / or letters in different examples. This repetition is for brevity and clarity rather than to show the relationship between the different embodiments discussed.

[0046] In ad...

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Abstract

The invention provides a semiconductor structure. The semiconductor structure comprises a substrate with an active region and an isolation region, an insulating layer located on the substrate, a seedcrystal layer located on the insulating layer, a compound semiconductor layer located on the seed crystal layer, a gate structure which is located on the compound semiconductor layer and in the activeregion, an isolation structure which is located on the substrate and in the isolation region, a pair of via holes which are in the isolation region and on both sides of the gate structure, and a source structure and a drain structure which are located on two sides of the gate structure on the substrate. The pair of via holes passes through the isolation structure and contacts the seed layer. Thesource structure and the drain structure are electrically connected to the seed layer through the pair of via holes respectively. According to the semiconductor structure provided by the invention, the electric field can be redistributed, the breakdown voltage is improved, and the semiconductor device is allowed to be applied to high-voltage operation.

Description

technical field [0001] The present invention relates to semiconductor structures, and more particularly to semiconductor structures having pairs of via holes in contact with a seed layer. Background technique [0002] Gallium nitride-based (GaN-based) semiconductor materials have many excellent material properties, such as high heat resistance, wide band-gap, and high electron saturation rate. Therefore, gallium nitride-based semiconductor materials are suitable for high-speed and high-temperature operating environments. In recent years, GaN-based semiconductor materials have been widely used in light emitting diode (LED) devices and high frequency devices, such as high electron mobility transistors (HEMTs) with heterostructures. [0003] However, in the operation of the high electron mobility transistor (HEMT) element, the epitaxial layer located at the bottom of the element structure has many negatively charged impurities due to its own material characteristics. At this t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/40
CPCH01L29/7786H01L29/402
Inventor 林鑫成林文新好韩
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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