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A large-area flexible substrate inp HBT device and its preparation method

A flexible substrate, large-area technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of device performance degradation, difficulty in large-area batch preparation, etc. simple effect

Active Publication Date: 2022-03-08
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a large-area flexible substrate InP HBT device, which is used to solve the problems of serious device performance degradation and large-area batch preparation difficulties in the flexible process of existing traditional rigid substrate electronic devices. High performance large area flexible substrate InP HBT device

Method used

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  • A large-area flexible substrate inp HBT device and its preparation method
  • A large-area flexible substrate inp HBT device and its preparation method
  • A large-area flexible substrate inp HBT device and its preparation method

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preparation example Construction

[0033] The invention provides a large-area flexible substrate InP HBT device and its preparation method. The large-area flexible substrate InPHBT device includes a flexible substrate, a thermosetting adhesive layer, an InP HBT device and a circuit, and the InP HBT device is located on a flexible substrate. superior. Through the method of epitaxial layer peeling and roller imprinting, the preparation of InP HBT ultra-high-speed and ultra-high-frequency devices on large-area flexible substrates is realized, and it has flexible characteristics such as good bendability and ductility. The preparation method is compatible with the existing compound semiconductor technology and micro-nano processing technology, has the potential for batch production, and lays an important foundation for the high-frequency and high-speed development of flexible electronic devices.

[0034] The technical solution of the present invention will be further described below in conjunction with the accompany...

Embodiment

[0047] A method for preparing a large-area flexible substrate InP HBT device, comprising the following steps:

[0048] ① On a semi-insulating InP substrate, an InGaAs stop layer with a thickness of 200nm was prepared by MBE, and then an epitaxial layer structure of InP with a thickness of 200nm, InGaAs with a thickness of 1μm and InP with a thickness of 100nm was sequentially epitaxial.

[0049] ② On the front side of the InP HBT epitaxial layer, the preparation of devices and ultra-high-speed circuits is completed through processes such as photolithography, evaporation, etching, and deposition.

[0050] ③ Spin-coat a 25 μm temporary bonding material adhesive on the front side of the silicon carbide temporary carrier, the spin-coating speed is 3000 rpm, and the spin-coating time is 45s, and the silicon carbide temporary carrier coated with the temporary bonding material is facing the Place on a hot plate to pre-bake, set the temperature of the hot plate to 110°C for 2 minutes....

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Abstract

The invention discloses a large-area flexible substrate InP HBT device and a preparation method thereof. The preparation method comprises: growing an InP HBT epitaxial structure with a stop layer forwardly on an InP substrate; completing device and circuit preparation; InP HBT epitaxy Temporary bonding of the chip and the front of the temporary carrier; selective removal of the back of the InP substrate up to the stop layer; the bonding of the back of the InP HBT epitaxial layer to the flexible substrate by means of roller embossing; strengthening of the InP by heating Attaching the back of the HBT epitaxial layer to the flexible substrate; separating the InP HBT epitaxial layer from the temporary carrier to obtain a flexible substrate InP HBT device. The present invention realizes the preparation of large-area flexible substrate InP HBT devices by means of epitaxial layer peeling and roller embossing. The preparation method is compatible with existing compound semiconductor technology and micro-nano processing technology, and has batch preparation potential.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a large-area flexible substrate InP HBT device and a preparation method thereof. Background technique [0002] InP HBT has excellent frequency characteristics, good device consistency and breakdown characteristics. It is the best choice for realizing ultra-high-speed and ultra-high-frequency circuits, and has important application prospects in wireless communication and high-frequency transmission. Usually InP HBT devices are prepared on rigid InP substrate epitaxial wafers, and the InP substrate is extremely fragile, which restricts the development of InP HBT devices to a certain extent. If the InP HBT device has flexible characteristics such as stretchability and extensibility, it will have greater flexibility, be able to adapt to different and complex working environments such as non-planar and small volume, and meet the miniaturization and high integration of future el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L27/12
CPCH01L21/67092H01L21/67132H01L27/12
Inventor 吴立枢戴家赟程伟孔月婵陈堂胜
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD