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Shield layer, method for producing shield layer, and oxide sputtering target

A manufacturing method and shielding layer technology, applied in sputtering plating, magnetic field/electric field shielding, coating, etc., can solve the problems of easy intrusion, resistance value and transmittance change, etc., and achieve excellent environmental resistance and high resistance value , the effect of high transmittance

Active Publication Date: 2020-11-06
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] Here, the above-mentioned ITO film and IZO film tend to become crystalline, so when used in a high-temperature and high-humidity environment, corrosive substances such as moisture are likely to penetrate into the film, and the resistance value and transmittance may change.

Method used

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  • Shield layer, method for producing shield layer, and oxide sputtering target
  • Shield layer, method for producing shield layer, and oxide sputtering target
  • Shield layer, method for producing shield layer, and oxide sputtering target

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Experimental program
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Embodiment

[0111] Hereinafter, the results of confirmation experiments conducted to confirm the effectiveness of the present invention will be described.

[0112]

[0113] As raw material powder, indium oxide powder (In 2 o 3 Powder: purity of 99.9% by mass or more, average particle size of 1 μm), silicon oxide powder (SiO 2 Powder: purity of 99.8 mass % or more, average particle size of 2 μm) and zirconium oxide powder (ZrO 2 Powder: a purity of 99.9% by mass or more, and an average particle diameter of 2 μm). And these were weighed so that it might become the compounding ratio shown in Table 1.

[0114] In addition, for zirconia powder (ZrO 2 Powder) purity, by measuring the Fe 2 o 3 , SiO 2 、TiO 2 、Na 2 O content, while the remainder is ZrO 2 Purity calculated when, sometimes containing up to 2.5% by mass of HfO 2 .

[0115] Each of the weighed raw material powders was put into a bead mill together with zirconia balls with a diameter of 0.5 mm as a grinding medium and a ...

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Abstract

Provided is a shield layer (20) disposed on a liquid-crystal display panel (10) and characterized by comprising an oxide that contains, using 100 atom% for the total of the metal components, In in therange of 60 to 80 atom% with the balance being Si and unavoidable impurity metal elements. The shield layer (20) may also contain Zr in the range of 1 to 32 atom% using 100 atom% for the total of themetal components.

Description

technical field [0001] The invention relates to a shielding layer arranged for antistatic in a display panel, a manufacturing method of the shielding layer and an oxide sputtering target used in the manufacturing method of the shielding layer. [0002] This application claims priority based on the patent application No. 2018-085459 filed in Japan on April 26, 2018 and the patent application No. 2019-068393 filed in Japan on March 29, 2019, and the contents thereof are incorporated herein. Background technique [0003] In display panels such as a liquid crystal display, an organic EL display, and a touch panel, a shielding layer is arranged to prevent malfunctions of liquid crystal elements, organic EL elements, and the like due to static electricity. In particular, in an in-cell touch panel, the above-mentioned shielding layer is also required to function to allow a touch signal to reach a sensor portion inside the panel while eliminating external interference. [0004] Fur...

Claims

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Application Information

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IPC IPC(8): C23C14/08C04B35/01C23C14/34G02B1/16G06F3/041H05K9/00
CPCC04B35/01C23C14/08C23C14/34G02B1/16G06F3/041H05K9/00C04B2235/3244C04B2235/3286C04B2235/3418C23C14/3414G02F1/133512G06F2203/04103H05K9/0083
Inventor 森理惠山口刚
Owner MITSUBISHI MATERIALS CORP