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Large-size YIG-doped single crystal thin film material and preparation method thereof

A single-crystal thin-film, large-size technology, applied in the direction of polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problems of low production efficiency, small film size, narrow range of film saturation magnetization, etc., and achieve production efficiency Enhanced, well-matched lattice effects

Pending Publication Date: 2020-11-10
中国电子科技集团公司第九研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the existing YIG single crystal thin film is heteroepitaxially grown on the GGG substrate by the liquid phase epitaxy method, and there are the following problems: the saturation magnetization range of the prepared thin film is narrow, and the thicker thin film has a small size, so the production efficiency Low

Method used

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  • Large-size YIG-doped single crystal thin film material and preparation method thereof
  • Large-size YIG-doped single crystal thin film material and preparation method thereof
  • Large-size YIG-doped single crystal thin film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Fill the platinum crucible with Nd 2 o 3 (Weight 1.059g), Y 2 o 3 (weight 5.484g), Fe 2 o 3 (Weight 81.671g), B 2 o 3 (weight 17.302g), Ga 2 o 3 (weight 6.979g), PbO (weight 887.505g), heat up to 1100°C in the epitaxial furnace, keep it warm for 6 hours, and rotate the crucible forward and reverse in this state, so that the components can be uniformly soluteized, at 100°C Cool down at a rate of 1 hour, stabilize the temperature in a supersaturated state of 930°C, put the GGG substrate into the solution, rotate the substrate at a rate of 100 rpm, and perform ferrite single crystal thin film for 40 minutes at the same time grown to obtain a single crystal film with a thickness of 28.6 μm, which is complete without cracks and in a mirror state.

[0031] Using DPA (destructive physical analysis) to test the cross-section of the film, the thickness of the film is about 28.6 μm, as figure 1 As shown in -a; AFM (atomic force microscope) is used to detect the morpholo...

Embodiment 2

[0033] Fill the platinum crucible with Nd 2 o 3 (weight 0.826g), Y 2 o 3 (weight 5.668g), Fe 2 o 3 (weight 78.189g), B 2 o 3 (Weight 17.380g), Ge 2 o 3(weight 6.437g), PbO (weight 891.5g), heat up to 1100°C in the epitaxial furnace, keep it warm for 6 hours, and rotate the crucible forward and reverse in this state, so that the components can be uniformly soluteized, at 100°C Cool down at a rate of 920°C to stabilize the temperature at a rate of 920°C, put the GGG substrate into the solution, rotate the substrate at a rate of 100 rpm, and perform a ferrite single crystal thin film for 30 minutes at the same time grown to obtain a single crystal film with a thickness of 24.6 μm, which is complete without cracks and in a mirror state.

[0034] Using DPA (destructive physical analysis) to test the cross-section of the film, the thickness of the film is about 24.6 μm, as figure 1 As shown in -b; use AFM (atomic force microscope) to detect the morphology of the film in th...

Embodiment 3

[0036] Fill the platinum crucible with La 2 o 3 (weight 1.276g), Y 2 o 3 (weight 5.315g), Fe 2 o 3 (Weight 86.114g), B 2 o 3 (Weight 17.314g), Ga 2 o 3 (weight 1.838g), PbO (weight 888.143g), heat up to 1100°C in the epitaxial furnace, keep it warm for 6 hours, and rotate the crucible forward and reverse in this state, so that the substances of each component can be uniformly soluteized, at 100°C Cool down at a rate of 1 hour, stabilize the temperature in a supersaturated state of 940°C, put the GGG substrate into the solution, rotate the substrate at a rate of 100 rpm, and perform ferrite single crystal thin film for 40 minutes at the same time grown to obtain a single crystal film with a thickness of 27.1 μm, which is complete without cracks and in a mirror state.

[0037] Using DPA (destructive physical analysis) to test the cross-section of the film, the thickness of the film is about 27.1 μm, such as figure 1 As shown in -c; use AFM (atomic force microscope) to ...

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Abstract

The invention discloses a large-size doped YIG single crystal thin film material and a preparation method, and belongs to the technical field of thin film materials; the chemical formula of the large-size doped YIG single crystal thin film material is Y3-xAxFe5-yByO12, wherein the A is at least one metal element such as La, Gd, Tb, Dy, Nd and Eu with the ion radius larger than Y ions, and B is atleast one element, such as Al, Ga, Pt, Ge, Si, Zr, Sc, for partial replacement of Fe ion sites. According to the invention, the ferrite single crystal film with the saturation magnetization of 800-1750 Gs and the thickness of more than 20 microns in 3 inches is prepared by a liquid phase epitaxy method, the saturation magnetization range of the film is wider, and the application of the single crystal film in a multi-band microwave device is facilitated; in addition, roughness RMS of the film can be reduced to 0.37 nm, lattice matching with a GGG substrate is good, and production efficiency isremarkably improved.

Description

technical field [0001] The invention relates to the technical field of thin film materials, in particular to a large-scale doped YIG single crystal thin film material and a preparation method. Background technique [0002] Components based on ferrite single crystal bulk materials have excellent microwave performance, but are bulky, heavy, and complex in structure, which is not conducive to system integration; microwave components based on single crystal thin film materials have simple structure, small size, Ease of integration and better batch performance consistency. In practical applications, the volume of the filter components made of microwave single crystal thin film materials is greatly reduced, and the chip type of the device is realized, thereby greatly reducing the volume of the entire system. At the same time, because the magnetic material of the YIG series It has high transmittance and Faraday rotation coefficient in the near-infrared band, and is widely used in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B29/28C30B19/00
CPCC30B19/00C30B29/22C30B29/28
Inventor 李俊陈运茂魏占涛游斌姜帆张平川杨陆蓝江河
Owner 中国电子科技集团公司第九研究所
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