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A Calculation Method of Instantaneous Stress of Thin Film

A calculation method and stress technology, applied in the field of calculation of instantaneous stress of thin films, can solve problems such as reducing the accuracy of thin film stress, and achieve the effect of accurate results

Active Publication Date: 2021-06-29
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Neglecting this effect will reduce the accuracy of membrane stress calculations

Method used

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  • A Calculation Method of Instantaneous Stress of Thin Film
  • A Calculation Method of Instantaneous Stress of Thin Film
  • A Calculation Method of Instantaneous Stress of Thin Film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Thin film stress is determined by measuring the deformation of the film-substrate system during electrodeposition; the substrate is a planar rectangular matrix material having a size of 80 * 20 mm. The substrate is single-sided using a magnetron sputtering layer 30 nm thick gold layer to conduct electrical treatment. The rectangular base is fixed and a nickel film is deposited at its conductive surface. The material and geometric characteristics of the substrate and film are shown in Table-1.

[0055] Table-1 The materials and geometric characteristics used in Example 1 parameters

[0056] Elastic modulus (GPA) Poisson's ratio Thickness (mm) Thin film (NI) 219(E f )

0.31(v f )

Substrate (Si) 170(E s )

0.28(v s )

0.3(h s )

Substrate (quartz glass) 55(E s )

0.25(v s )

0.5(h s )

Substrate (PMMA) 3(E s )

0.40(v s )

0.769(h s )

[0057] To illustrate the effects of different elastic modulus ratios and thickness ...

Embodiment 2

[0072] The same experimental procedure as in Example 1 was used.

[0073] In order to compare the transient stress calculation method in the literature (according to formula (4), reference hearne sj, floro j a.mechanisms Inducing Compressive Stress During ElectrodePosition Co., J] .journal of Applied Physics, 2005,97 (1): 504 -216.) With the process of the present invention, the instantaneous stress of the electrodeposition of the electrodeposition Ni layer at different current densities is calculated separately, and obtained Figure 4 , 5 ( Figure 4 It is the result of the literature method, Figure 5 It is the result of the present invention). According to the formula (3), Figure 4 The slope of each curve is the corresponding instantaneous stress. As can be seen from the figure, each curve N initial slope is negative or close to zero, then the slope suddenly turns a positive value, and gradually stabilizes. This means that during room temperature, the initial stress is expressed a...

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Abstract

A method for calculating the instantaneous stress of a thin film, comprising the following steps: performing a thin film deposition test on a substrate, and measuring the radius of curvature R of the substrate and the thickness h of the deposited layer in real time f ; Calculate the instantaneous stress σ of the film at the i-th moment according to the following formula fi . The present invention is applicable to the stress calculation under different elastic modulus ratios and thickness ratios of the substrate and the film, can accurately display the stress change in the initial stage during the electrodeposition process, and can accurately obtain the instantaneous stress of each sampling point on the entire thickness, The result is more accurate, and it is suitable for the calculation of film stress in the fields of electrochemical deposition, CVD vapor deposition, and surface spraying.

Description

Technical field [0001] The present invention relates to a method of calculating a thin film instantaneous stress, suitable for electrochemical deposition, CVD vapor deposition, surface spraying and other fields of film stress. Background technique [0002] As the size of the film devices continue to decrease, the film stress becomes an important reason for the form of failure, slip and hierarchy of thin film devices. Film stress not only affects the structure of the film, but also related to the properties of film optics, electrical, mechanics, etc., the film stress studies have gradually become one of the hotspots in the field of thin film research. The film stress is required during the microelectronics and microelectromechanical system (MEMS) manufacturing. There are many ways to measure film stress, such as X-ray diffraction, Raman spectroscopy, and substrate curvature. Among them, the substrate curvature method that characterizes the substrate curvature is being widely used ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L5/00G06F17/10
CPCG01L5/00G06F17/10
Inventor 蒋炳炎强军罗坤杰董彦灼
Owner CENT SOUTH UNIV