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Band-gap reference voltage source

A reference voltage source and reference circuit technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve problems such as poor performance, inability to apply low-voltage circuits, and limit the application of bandgap reference voltage sources 100 to achieve reduction Effect of actual power consumption and low power consumption

Inactive Publication Date: 2020-11-27
SG MICRO
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are the following problems in the above-mentioned bandgap reference voltage source 100: first, the voltage value of the output voltage VREF of the bandgap reference voltage source 100 is about 1.25V, which cannot be applied in low-voltage circuits, which limits the bandgap reference voltage of the prior art Source 100 Applications
Secondly, the existing low-voltage bandgap reference voltage source has poor performance in terms of accuracy and power consumption, and it is difficult to generate a high-precision reference voltage under low-voltage conditions

Method used

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Embodiment Construction

[0023] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0024] It should be understood that in the following description, "circuitry" may include single or multiple combined hardware circuits, programmable circuits, state machine circuits and / or elements capable of storing instructions for execution by programmable circuits. When an element or circuit is said to be "connected to" another element or an element / circuit is said to be "connected between" two nodes, it can be directly coupled or connected to the other element or there can be intervening elements and the connection between elements can be be physical, logical, or a combination thereof. In contrast, when an element is referred to as being "directly coupled to" or...

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Abstract

The application discloses a band-gap reference voltage source. The band-gap reference circuit comprises a charge pump circuit, a reference circuit and a sample hold circuit, the charge pump circuit isused for generating a power supply voltage according to a power supply voltage, the reference circuit generates an output voltage according to the power supply voltage, and the sample hold circuit isused for sampling and holding the output voltage of the reference circuit to output a band-gap reference voltage. Power supply voltage with the voltage value twice that of power supply voltage is provided for the reference circuit through the charge pump circuit, so that the reference circuit can normally work in a low-voltage circuit, and meanwhile, the precision of band-gap reference voltage isnot influenced. The band-gap reference voltage source can stably work within a large power supply voltage range and is insensitive to power supply voltage, so that the band-gap reference voltage source can normally work under low power supply voltage.

Description

technical field [0001] The present invention relates to the technical field of switching power supplies, and more specifically, to a bandgap reference voltage source. Background technique [0002] In the field of analog integrated circuit or mixed signal design, the reference voltage source is a very important module, and the reference voltage source can provide voltage reference and current reference for the system. With the improvement of circuit integration, more and more reference voltage sources are integrated into the chip to reduce system cost. [0003] Traditional voltage references usually rely on bandgap references such as figure 1 As shown, the bandgap reference voltage source 100 includes an error amplifier OP1, a PMOS (Positive Channel Metal Oxide Semiconductor, P-type Metal Oxide Semiconductor Field Effect Transistor) transistor M1, a mirror current source composed of a PMOS transistor M2, and a PMOS transistor M3, and a PNP transistor. Q1, PNP tube Q2, PNP t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/46G05F1/575
CPCG05F1/461G05F1/575
Inventor 谢程益王野于翔
Owner SG MICRO