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Photoresist pattern trimming compositions and pattern formation methods

A technology of photoresist and composition, applied in the field of forming fine photoresist pattern, photoresist pattern trimming composition

Pending Publication Date: 2020-12-01
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as pattern sizes and device geometries decrease, trimming process considerations, such as line width roughness, pattern collapse margin, and coating defect levels, are important to minimize defects become more and more important

Method used

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  • Photoresist pattern trimming compositions and pattern formation methods
  • Photoresist pattern trimming compositions and pattern formation methods
  • Photoresist pattern trimming compositions and pattern formation methods

Examples

Experimental program
Comparison scheme
Effect test

example

[0064] polymer synthesis

[0065] Polymers were synthesized according to the procedure described below using the following monomers:

[0066]

Synthetic example 1

[0068]The monomer feed solution was prepared by mixing 8.78 g of methyl isobutyl methanol (MIBC) and 40.50 g of monomer M1 in the first vessel. The initiator feed solution was prepared by combining 1.91 g of Vazo-67 free radical initiator (E.I. duPont de Nemours and Company) and 17.20 g of MIBC in a second vessel and stirring the mixture to dissolve the initiator. 22.00 g of MIBC were introduced into the reaction vessel and the vessel was purged with nitrogen for 30 minutes. The reaction vessel was then heated to 90°C with stirring. Simultaneously, the introduction of the monomer feed solution and the initiator feed solution into the reaction vessel was initiated. The monomer feed solution was fed over a 2 hour period and the initiator feed solution was fed over a 3 hour period. The reaction vessel was maintained at 90°C with stirring for an additional 7 hours and then allowed to cool to room temperature. The reaction mixture was precipitated from heptane (20x) to give poly...

Synthetic example 2

[0070] The monomer feed solution was prepared by dissolving 10.46 g monomer M2, 5.16 g monomer M3 and 5.63 g monomer M5 in 190 g ethyl lactate in a reaction vessel and heating the solution to 165°C. The initiator feed solution was prepared by combining 3.40 g of V-601 free radical initiator (Wako Chemical Company) and 34.50 g of ethyl lactate in a vessel and stirring the mixture to dissolve the initiator. The initiator feed solution was fed into the reaction vessel over a period of 0.5 hours. The reaction vessel was maintained at 165°C with stirring for an additional 24 hours and then allowed to cool to room temperature. The reaction mixture was precipitated from methanol:water 75:25 (wt%) (20x) to give polymer P2 (17 g, 81% yield) as a white solid. Mw, Mn and PDI were determined as described in Example 1. The monomer ratios and molecular weight results in the polymers are shown in Table 1.

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PUM

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Abstract

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I) shown in the specification, wherein Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof; adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

Description

Background technique [0001] The present invention generally relates to the manufacture of electronic devices. More particularly, the present invention relates to photoresist patterning compositions and to methods of patterning using such compositions. The compositions and methods are particularly useful for forming fine lithographic patterns. [0002] In the semiconductor manufacturing industry, photoresist materials are used to transfer images to one or more underlying layers, such as metal, semiconductor or dielectric layers, disposed on a semiconductor substrate, as well as the substrate itself. In order to increase the integration density of semiconductor devices and allow the formation of structures having dimensions in the nanometer range, photoresist and lithographic processing tools with high resolution capabilities have been and continue to be developed. [0003] Positive chemically enhanced photoresists are typically used for high resolution processing. Such resis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004H01L21/027
CPCG03F7/004H01L21/0274G03F7/405H01L21/0273G03F7/0045G03F7/0048G03F7/033G03F7/2004G03F7/26G03F7/425G03F7/38G03F7/40C07C309/28H01L21/31138C07C309/01C07C309/39
Inventor I·考尔C·刘侯希森K·罗威尔李明琦徐成柏
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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