A dielectric breakdown test structure

Abstract

The invention provides a dielectric breakdown test structure. The invention conducts the bypass circuit through the change of the leakage current of the capacitor structure to be tested, and disconnects the whole circuit through the conduction of the bypass circuit, so as to avoid the leakage current of the capacitor structure to be tested. The weak point of the structure is hard broken down and burned during the test process, and the weak point position of the capacitor structure to be tested can generate a certain leakage current, so that the capacitor structure to be tested can be further analyzed for failure during the test process, thereby The defects of the capacitor structure to be tested can be found, and targeted improvements can be made.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a dielectric breakdown test structure. Background technique [0002] As a very important structure in the reliability evaluation of semiconductor integrated circuits, the capacitor structure can be used for gate oxide dielectric layers, metal-insulator-metal (MIM) dielectric layers and metal oxide dielectric layers of metal-oxide semiconductor field effect transistors (MOSFETs). - Reliability assessment of oxide-metal (MOM) dielectric layers. [0003] Time-dependent dielectric breakdown (TDDB, time dependent dielectric breakdown) test is an important method of reliability evaluation. Through TDDB, the time of dielectric breakdown can be obtained to calculate the reliability distribution and life. However, the TDDB test of the capacitance structure takes a long time and the number of samples to be tested is large. Therefore, in order to shorten the test time, ...

AI Technical Summary

Problems solved by technology

However, the TDDB test of the capacitor structure takes a long time and the number of samples to be tested is large. Therefore, in order to shorten the test time, most TDDB tests need to connect multiple capacitor structures in parallel for testing.

However, before the thermal breakdown of the capacitor structure occurs, the leakage current of the capacitor structure will increase sharply, so that the test machine in the parallel test mode cannot respond in time, which makes the capacitor structure prone to thermal breakdown and burnout. The final capacitor structure cannot locate the weak points of the capacitor structure in the subsequent failure analysis, and further failure analysis, so that the defects of the capacitor structure cannot be found, and targeted improvements cannot be made

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