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A kind of preparation method of flexible two-dimensional tmds photodetector

A photodetector and flexible technology, applied in the field of optoelectronics, can solve the problems of thin film uniformity and integrity damage, complex preparation methods, etc., to achieve the effect of ensuring integrity and uniformity, and simplifying the preparation process

Active Publication Date: 2022-06-21
XIAN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that the existing technology is easy to cause damage to the uniformity and integrity of the film, and the preparation method is complicated, the present invention provides a preparation method of a flexible two-dimensional TMDs photodetector

Method used

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  • A kind of preparation method of flexible two-dimensional tmds photodetector
  • A kind of preparation method of flexible two-dimensional tmds photodetector
  • A kind of preparation method of flexible two-dimensional tmds photodetector

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Embodiment 1

[0044] Embodiment 1: a preparation method of a flexible two-dimensional TMDs photodetector, comprising the following steps:

[0045] 1. Two-dimensional MoS was grown on sapphire substrate by CVD method 2 film. figure 2 (a) MoS grown on a sapphire substrate 2 Optical microscope images of thin films, image 3 is the Raman spectrum of the sample, given by image 3 It is known that A 1g with E 2g 1 The difference is 19.128cm -1 , so the MoS 2 The film is a single layer.

[0046] 2. Grow two-dimensional MoS on the surface 2 The growth substrate (15*5mm) of the thin film is placed on the heating table to preheat, the temperature of the heating table is set to 60 °C, and the preheating time is 2 minutes;

[0047] 3. Take 1ml of polyimide (PI) solution, drop the PI solution on the surface of the growth substrate, place the substrate on the spin coater for spin coating, set the spin coater speed to 1000rpm, and set the time to 10s;

[0048] 4. The growth substrate spin-coat...

Embodiment 2

[0052] Embodiment 2: a preparation method of a flexible two-dimensional TMDs photodetector, comprising the following steps:

[0053] 1. Two-dimensional WS was grown on sapphire substrate by CVD method 2 film. Figure 5 (a) is the WS grown on the sapphire substrate 2 Optical microscope images of thin films, Image 6 is the Raman spectrum of the sample, it can be seen from the figure that A 1g with E 2g 1 The difference is 63.821cm -1 , so the WS 2 The film is a single layer.

[0054] 2. Grow the surface with two-dimensional WS 2 The growth substrate (15*5mm) of the thin film is placed on the heating table to preheat, the temperature of the heating table is set to 60 °C, and the preheating time is 4 minutes;

[0055] 3. Take 1ml of polyimide (PI) solution, drop the PI solution on the surface of the growth substrate, place the substrate on a glue spinner for spin coating, set the speed of the glue spinner to 2000rpm and the time to 30s;

[0056] 4. The growth substrate ...

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Abstract

The invention relates to the field of optoelectronic technology, and discloses a method for preparing a flexible two-dimensional TMDs photodetector. The method comprises the following steps: first, a two-dimensional TMDs thin film is prepared on a growth substrate by CVD; then, a layer of PI solution is spin-coated on the growth substrate, and heated and solidified to form a PI solid thin film. The cured PI film is torn off from the growth substrate, and the two-dimensional TMDs film is separated from the growth substrate and attached to the PI film; finally, the vacuum thermal evaporation coating method is used to coat the flexible PI substrate with the two-dimensional TMDs film patterned metal electrodes. The present invention proposes a new method for preparing a flexible two-dimensional TMDs photodetector, which simplifies the two-dimensional TMDs material transfer process in the preparation process of the two-dimensional TMDs photodetector, and ensures the integrity of the two-dimensional TMDs material before and after the transfer And uniformity, with environmental friendliness.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to a preparation method of a flexible two-dimensional TMDs photodetector. Background technique [0002] Based on Moore's Law, the semiconductor materials used in modern electronic devices have been extended to smaller 2D materials. Since graphene was discovered in 2004, two-dimensional materials have attracted widespread attention from researchers due to their superior physical and chemical properties. Graphene material has ultra-high electron mobility, but its zero band gap limits its application in electronic devices. The TMDs material has a layered structure similar to that of graphene. The bulk TMDs material is an indirect bandgap semiconductor, and as the number of layers decreases to a single layer, it will change from an indirect bandgap to a direct bandgap structure. [0003] At present, commercial photodetectors often need to use thicker bulk materials such as sil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1896H01L31/1864
Inventor 坚佳莹白泽文龙伟常洪龙坚增运
Owner XIAN TECH UNIV