Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method for metal plastic film

A metal-plastic and conductive metal layer technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of high cost, large manpower, material and financial resources, complicated process steps, etc., and achieve simplified process flow, The effect of improving production yield

Pending Publication Date: 2020-12-11
MICRON OPTOELECTRONICS CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the boiling point of metal is very high. For example, the boiling point of copper is 2562°C. When its vapor touches the plastic, it will melt immediately, causing product defects. In the subsequent coating of photoresist, exposure, development, etching, photoresist removal, etc. The process requires a lot of manpower, material and financial resources, and the process steps are complicated, which is not conducive to the improvement of product yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for metal plastic film
  • Preparation method for metal plastic film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0016] Please refer to figure 1 and figure 2 , a preparation method of a metal plastic film, comprising the steps of

[0017] S1: setting a mask plate 2 with a preset pattern on one side of the substrate 1;

[0018] S2: performing magnetron sputtering to form a protective layer 3 with the same preset pattern on the surface of the substrate 1;

[0019] S3: performing vacuum evaporation to form a conductive metal layer 4 with the same preset pattern on the side of the protective layer 3 away from the substrate 1 .

[0020] From the above description, it can be seen that the beneficial effect of the present invention is: before coating the substrate 1, the mask 2 is provided on one side of the substrate 1, and then the mask 2 is formed on the surface of the substrate 1 by magnetron sputtering. 2 Preset the protective layer 3 with the same pattern, and then coat a layer of conductive metal layer 4 on the protective layer 3 by means of vacuum evaporation. The protective layer 3...

Embodiment 1

[0030] Please refer to figure 1 and figure 2 , embodiment one of the present invention is: a kind of preparation method of metal plastic film, comprises the following steps

[0031] S1: setting a mask plate 2 with a preset pattern on one side of the substrate 1;

[0032] S2: performing magnetron sputtering to form a protective layer 3 with the same preset pattern on the surface of the substrate 1;

[0033] S3: performing vacuum evaporation to form a conductive metal layer 4 with the same preset pattern on the side of the protective layer 3 away from the substrate 1 .

[0034] It is easy to understand that in the existing process, it is necessary to use multiple steps to process the metal plastic film to form a metal grid. Because there are many process steps, process errors will inevitably occur in each process step. With the accumulation of errors, the consistency of the product is difficult to be guaranteed, and the product yield is low; and in this embodiment, the mask ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
boiling pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method for a metal plastic film. The preparation method comprises the following steps of S1, arranging a mask plate with a preset pattern on one side of a base material; S2, conducting magnetron sputtering, and forming a protective layer with the same pattern as the preset pattern on the surface of the base material; and S3, conducting vacuum evaporation, andforming a conductive metal layer with the same pattern as the preset pattern on the side face, away from the base material, of the protective layer. According to the preparation method for the metal plastic film, only one magnetron sputtering process and one vacuum evaporation process need to be carried out on the base material to form a metal grid, and the production efficiency is greatly improved. As the production process is simplified, the risk of product error accumulation is reduced, and the product yield is improved.

Description

technical field [0001] The invention relates to the technical field of touch screens, in particular to a method for preparing a metal-plastic film. Background technique [0002] In order for the display panel to have a touch function, it needs to be matched with a touch screen. The core sensor material used in small-size touch screens is generally indium tin oxide (ITO), and the core sensor material used in large-size touch screens is generally metal grid copper or nano-silver wires. It has the advantages of both conductivity and transparency and has become the first choice for display touch sensing materials. With the development of large-sized and flexible display panels, ITO is not suitable for this field because of its non-rollable softness and relatively high resistance. Hollow metal grid touch screen sensors have emerged as the times require. This kind of metal grid is hollowed out in the grid, and the width of the metal grid line is generally only 5 μm or less, so i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04C23C14/35C23C14/24C23C14/20
CPCC23C14/042C23C14/35C23C14/24C23C14/20
Inventor 苏伟叶宗和王海峰
Owner MICRON OPTOELECTRONICS CO LTD