Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Infrared detector and preparation method thereof

An infrared detector and substrate technology, applied in the field of infrared detectors, can solve the problems of low detection efficiency and detection range, weak preparation process compatibility, etc., so as to enhance the light detection performance, improve the absorption efficiency and range, and improve the light response. effect of ability

Active Publication Date: 2020-12-11
深圳市奥伦德元器件有限公司
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current graphene / GaAs infrared detector still has the problems of low detection efficiency and detection range, and the problem of weak compatibility of the preparation process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared detector and preparation method thereof
  • Infrared detector and preparation method thereof
  • Infrared detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] This part will describe the specific embodiment of the present invention in detail, and the preferred embodiment of the present invention is shown in the accompanying drawings. Each technical feature and overall technical solution of the invention, but it should not be understood as a limitation on the protection scope of the present invention.

[0048] In the description of the present invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc. indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only In order to facilitate the description of the present invention and simplify the description, it does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.

[0049] I...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
radiusaaaaaaaaaa
thicknessaaaaaaaaaa
electron mobilityaaaaaaaaaa
Login to View More

Abstract

The invention discloses an infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a graphene layer, a quantum dot layer and an interdigital electrode which are sequentially arranged from bottom to top, wherein the quantum dot layer comprises an inner core formed by lead sulfide and a shell layer formed by gold, the shell layer wraps the surface of the inner core, and the interdigital electrode is plated on the surface of the shell layer. The mixed nanostructure (namely the quantum dot layer) of the metal gold and the semiconductor lead sulfide can improve the photoelectric conversion efficiency of the device, and can significantly enhance the optical detection performance of the device.

Description

technical field [0001] The invention relates to the technical field of infrared photoelectric detection, in particular to an infrared detector. Background technique [0002] Infrared detectors have a wide range of applications in missile early warning, security protection, photoelectric detection, infrared imaging and many other fields. Graphene has an electron mobility as high as 350,000 cm 2 / (V·s), the conductivity is 10 6 S / m, the sheet resistance is about 31Ω / sq, and the thermal conductivity at room temperature is 5000W / mK. Graphene exhibits ultrafast carrier dynamics, enabling rapid conversion of photons or plasmons to current or voltage. Therefore, graphene-based optoelectronic devices have great potential for development. Graphene / GaAs infrared detectors show good detection efficiency and high selectivity, so they are favored by researchers. At present, graphene-based high-efficiency infrared detection is a goal that people are relentlessly pursuing. [0003] H...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/109H01L31/18B82Y30/00B82Y40/00G02B5/00
CPCH01L31/109H01L31/18H01L31/035218H01L31/035227G02B5/008B82Y30/00B82Y40/00Y02P70/50
Inventor 杨为家邱晨吴质朴何畏
Owner 深圳市奥伦德元器件有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com