Infrared detector and preparation method thereof

Abstract

The invention discloses an infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a graphene layer, a quantum dot layer and an interdigital electrode which are sequentially arranged from bottom to top, wherein the quantum dot layer comprises an inner core formed by lead sulfide and a shell layer formed by gold, the shell layer wraps the surface of the inner core, and the interdigital electrode is plated on the surface of the shell layer. The mixed nanostructure (namely the quantum dot layer) of the metal gold and the semiconductor lead sulfide can improve the photoelectric conversion efficiency of the device, and can significantly enhance the optical detection performance of the device.

Description

technical field

[0001] The invention relates to the technical field of infrared photoelectric detection, in particular to an infrared detector. Background technique

[0002] Infrared detectors have a wide range of applications in missile early warning, security protection, photoelectric detection, infrared imaging and many other fields. Graphene has an electron mobility as high as 350,000 cm 2 / (V·s), the conductivity is 10 6 S / m, the sheet resistance is about 31Ω / sq, and the thermal conductivity at room temperature is 5000W / mK. Graphene exhibits ultrafast carrier dynamics, enabling rapid conversion of photons or plasmons to current or voltage. Therefore, graphene-based optoelectronic devices have great potential for development. Graphene / GaAs infrared detectors show good detection efficiency and high selectivity, so they are favored by researchers. At present, graphene-based high-efficiency infrared detection is a goal that people are relentlessly pursuing.

[0003] H...

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