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Brazing method for chromium-silicon target material and copper back plate

A brazing method and copper backplate technology, applied in welding equipment, metal processing equipment, manufacturing tools, etc., can solve the problems of short service life and low welding combination rate of target components, so as to avoid internal stress and improve welding effect Effect

Pending Publication Date: 2020-12-15
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, due to its brittleness, there is still no suitable welding method for the chromium-silicon target, or the welding bonding rate of the target component obtained by welding is low, and the service life is short.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This embodiment provides a brazing method for a chromium-silicon target and a copper back plate, the density of the chromium-silicon target is 5.09g / cm 3 The welding surface of the copper back plate is provided with a solder groove, the diameter of the solder groove is 15mm smaller than the diameter of the target material, and the depth of the solder groove is 0.25mm;

[0040] The brazing method comprises the following steps: performing sand blasting and electroless nickel plating on the welding surfaces of the chromium-silicon target material and the copper backplate in sequence, and then brazing the processed chromium-silicon target material and the copper backplate;

[0041] The roughness of the welding surface of the chrome-silicon target and the copper back plate after sandblasting is 2 μm;

[0042] In the electroless nickel plating treatment, the hydrochloric acid with a mass concentration of 11% was used for activation for 22s, the pH of the nickel plating was 4....

Embodiment 2

[0047] This embodiment provides a brazing method for a chromium-silicon target and a copper back plate, the density of the chromium-silicon target is 6.09g / cm 3 The welding surface of the copper back plate is provided with a solder groove, the diameter of the solder groove is 12mm smaller than the diameter of the target material, and the depth of the solder groove is 0.3mm;

[0048] The brazing method comprises the following steps: performing sand blasting and electroless nickel plating on the welding surfaces of the chromium-silicon target material and the copper backplate in sequence, and then brazing the processed chromium-silicon target material and the copper backplate;

[0049] The roughness of the welding surface of the chrome-silicon target and the copper back plate after sandblasting is 3 μm;

[0050] In the electroless nickel plating process, the hydrochloric acid with a mass concentration of 8% was used for activation for 30s, the pH of the nickel plating was 4.6, t...

Embodiment 3

[0055] This embodiment provides a brazing method for a chromium-silicon target and a copper back plate, the density of the chromium-silicon target is ≥6.59g / cm 3 The welding surface of the copper back plate is provided with a solder groove, the diameter of the solder groove is 18mm smaller than the diameter of the target material, and the depth of the solder groove is 0.2mm;

[0056] The brazing method comprises the following steps: performing sand blasting and electroless nickel plating on the welding surfaces of the chromium-silicon target material and the copper backplate in sequence, and then brazing the processed chromium-silicon target material and the copper backplate;

[0057] After sand blasting, the roughness of the welding surface of the chromium silicon target and the copper back plate is 2.4 μm;

[0058] In the electroless nickel plating treatment, the hydrochloric acid with a mass concentration of 15% was used for activation for 15s, the pH of the nickel plating ...

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Abstract

The invention relates to a brazing method for a chromium-silicon target material and a copper back plate. The density of the chromium-silicon target material is larger than or equal to 5.09 g / cm <3>;a welding surface of the copper back plate is provided with a welding flux groove; the diameter of the welding flux groove is smaller than the diameter of a target material by 12 to 18 mm; and the depth of the welding flux groove is 0.2 to 0.3 mm. The brazing method comprises the following steps of sequentially carrying out sand blasting and chemical nickel plating treatment on the welding face ofthe chromium-silicon target material and the welding face of the copper back plate, and then carrying out brazing on the treated chromium-silicon target material and the copper back plate; and in chemical nickel plating treatment, adopting hydrochloric acid for activation for 15 to 30 s, wherein the nickel plating pH is 4.6 to 4.8; and the nickel plating layer has an average thickness of 7 to 12mu m. According to the brazing method for the chromium-silicon target material and the copper back plate provided by the invention, the welding method is redesigned, parameters in the nickel plating process are controlled, effective welding of the chromium-silicon target material and the copper back plate is achieved through sand blasting, the welding bonding rate is larger than or equal to 97 percent, and the single defect rate is smaller than or equal to 1.5 percent.

Description

technical field [0001] The invention relates to the field of target welding, in particular to a brazing method for a chromium-silicon target and a copper back plate. Background technique [0002] Chromium-silicon alloy sputtering target, as a good conductor for vacuum sputtering, can be used in the field of electronic gate materials and electronic thin films. Chromium-silicon alloy sputtering targets usually have higher density, higher uniformity of internal structure, lower oxygen content and better machining conditions, so that chromium-silicon alloy sputtering targets can be used in vacuum sputtering Good performance when plating. [0003] For example, CN207904355U discloses a rotating chromium-silicon target material, which includes a back tube, a brazing layer is arranged outside the back tube, and a chromium-silicon alloy tube is arranged outside the brazing layer; The other end of the pipe is provided with a positioning groove and a flange. Its installation is conv...

Claims

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Application Information

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IPC IPC(8): B23K1/00B23K1/20
CPCB23K1/0008B23K1/20
Inventor 姚力军边逸军潘杰王学泽章丽娜
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD