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A kind of cutting method of silicon wafer below 140μm thickness

A silicon wafer and stage technology, applied in the cutting field of silicon wafers with a thickness of less than 140μm, can solve the problems of slow yield and other problems, and achieve the effects of reducing thickness, narrowing groove pitch, and improving the utilization rate of silicon material.

Active Publication Date: 2022-07-22
盐城高测新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the situation of the crystal silicon processing industry is becoming more and more serious. In most cases, many manufacturers improve the efficiency of crystal silicon processing by increasing the utilization rate of equipment and improving equipment. Therefore, improving the cutting method and increasing the yield of silicon rods is of great significance to the crystal silicon processing industry

Method used

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  • A kind of cutting method of silicon wafer below 140μm thickness
  • A kind of cutting method of silicon wafer below 140μm thickness
  • A kind of cutting method of silicon wafer below 140μm thickness

Examples

Experimental program
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Effect test

Embodiment 1

[0019] A method for cutting silicon wafers with a thickness of less than 140 μm, comprising the following steps:

[0020] (1) Replace the main roller: remove the main roller on the equipment, and replace the main roller that matches the groove pitch and sheet thickness;

[0021] (2) Wiring net: the main roller is covered with wire net;

[0022] (3) Upper rod: place the crystal rod in the slicer, and after setting the zero point, raise the crystal rod to the highest;

[0023] (4) Call process: read the process after compiling it;

[0024] (5) Heat engine: Install the nozzle, adjust the position and start to set the heat engine time to 5min, click the automatic operation button to start the heat engine;

[0025] (6) Power on: Click the automatic operation button to automatically cut;

[0026] (7) Lowering the bar: the lowering process includes a stage of lifting out the resin plate, a stage at a constant speed in the middle, a stage of pulling out a knife and a stage of pulli...

Embodiment 2

[0034] A method for cutting silicon wafers with a thickness of less than 140 μm, comprising the following steps:

[0035] (1) Replace the main roller: remove the main roller on the equipment, and replace the main roller that matches the groove pitch and sheet thickness;

[0036] (2) Wiring net: the main roller is covered with wire net;

[0037] (3) Upper rod: place the crystal rod in the slicer, and after setting the zero point, raise the crystal rod to the highest;

[0038] (4) Call process: read the process after compiling it;

[0039] (5) Heat engine: Install the nozzle, adjust the position and start to set the heat engine time to 5min, click the automatic operation button to start the heat engine;

[0040] (6) Power on: Click the automatic operation button to automatically cut;

[0041] (7) Lowering the bar: the lowering process includes a stage of lifting out the resin plate, a stage at a constant speed in the middle, a stage of pulling out a knife and a stage of pulli...

Embodiment 3

[0049] A method for cutting silicon wafers with a thickness of less than 140 μm, comprising the following steps:

[0050] (3) Replace the main roller: remove the main roller on the equipment, and replace the main roller that matches the groove pitch and sheet thickness;

[0051] (4) Wiring net: the main roller is covered with wire net;

[0052] (3) Upper rod: place the crystal rod in the slicer, and after setting the zero point, raise the crystal rod to the highest;

[0053] (4) Call process: read the process after compiling it;

[0054] (5) Heat engine: Install the nozzle, adjust the position and start to set the heat engine time to 5min, click the automatic operation button to start the heat engine;

[0055] (6) Power on: Click the automatic operation button to automatically cut;

[0056] (7) Lowering the bar: the lowering process includes a stage of lifting out the resin plate, a stage at a constant speed in the middle, a stage of pulling out a knife and a stage of pulli...

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Abstract

The invention discloses a method for cutting silicon wafers with a thickness of less than 140 μm, belonging to the technical field of crystalline silicon processing. The process of lowering the rod includes the stage of lifting out the resin plate, the stage of uniform speed in the middle, the stage of cutting out the knife and the stage of lifting the wire mesh. Using this invention for slicing can reduce the thickness of the silicon wafer, reduce the slot pitch, and increase the number of slices. At the end, the utilization rate of silicon material is obviously improved to achieve the purpose of reducing cost and increasing efficiency.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon processing, and in particular relates to a method for cutting silicon wafers with a thickness of less than 140 μm. Background technique [0002] At present, the crystalline silicon processing industry is becoming more and more severe. In most cases, many manufacturers improve the efficiency of crystalline silicon processing by improving equipment utilization and improving equipment. The research and development and improvement of equipment will occupy a long period of time. Therefore, improving the cutting method and increasing the yield of silicon rods is of great significance to the crystalline silicon processing industry. SUMMARY OF THE INVENTION [0003] In view of various deficiencies in the prior art, a method for cutting silicon wafers with a thickness of less than 140 μm is now proposed, which can effectively improve the wafer yield of crystalline silicon processing. [0004...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04
CPCB28D5/045B28D5/0058B28D5/0082
Inventor 唐亮邢旭张世龙
Owner 盐城高测新能源科技有限公司
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