A kind of manufacturing method and structure of trench mosfet
A manufacturing method and trench technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large on-resistance, achieve high breakdown voltage, increase breakdown voltage, and conduct small unit area. The effect of on-resistance
Active Publication Date: 2022-01-11
深圳市芯电元科技有限公司
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[0048] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0049] It should also be understood that the terminology used in the description of the present invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the present invention. As used in this specification and the appended claims, the singular forms "a", "an" and "the" are intended to include plural referents unless the context clearly dictates otherwise.
[0050] It should also be further unders...
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Abstract
The invention discloses a trench MOSFET manufacturing method and structure, comprising the following steps: step S1: forming an epitaxial layer on the surface of a substrate; step S2: forming a hard mask on the surface of the epitaxial layer, the hard mask includes a first an oxide layer, a second oxide layer, and a first silicon nitride, the first oxide layer is formed on the surface of the epitaxial layer, the first silicon nitride is formed on the surface of the first oxide layer, and the first An oxide layer is formed on the surface of the first silicon nitride; step S3: forming a trench in the epitaxial layer, removing the second oxide layer, and growing a gate oxide layer on the surface of the trench; step S4 : Deposit polysilicon, remove polysilicon outside the trench, remove the first silicon nitride, deposit the second silicon nitride, etch the second silicon nitride, on the side of the polysilicon The walls form sidewalls; the manufacturing method and structure of the trench MOSFET provided by the present invention have the advantages of smaller on-resistance per unit area, higher breakdown voltage, and the like.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a manufacturing method and structure of a trench MOSFET. Background technique [0002] The MOSFET chip is a discrete device, which belongs to the category of semiconductor power devices, and belongs to the field of semiconductor chips with integrated circuits. The most critical index parameters of MOSFETs include breakdown voltage (especially drain-source breakdown voltage), on-resistance and threshold voltage ( It is also called turn-on voltage in spoken language), usually, the larger the breakdown voltage, the better, and the smaller the on-resistance, the better. In order to achieve its nominal breakdown voltage, the internal structure of the MOSFET chip uses an epitaxial layer with a specific resistivity and a specific thickness to bear the pressure. Usually, the higher the breakdown voltage required to achieve, the resistivity of the epitaxial layer or (and) The grea...
Claims
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IPC IPC(8): H01L21/336H01L21/8234H01L27/088H01L29/06H01L29/786
CPCH01L29/0619H01L29/66742H01L29/78642H01L27/088H01L21/823437H01L21/823487
Inventor 潘光燃胡瞳腾
Owner 深圳市芯电元科技有限公司