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Graphical material preparation method

A technology of patterning and preparation steps, applied in the directions of replication/marking method, coating, printing, etc., can solve the problem of difficult to achieve stable and reliable photolithography effect, and achieve the effect of improved stability, fewer influencing factors, and simple influencing factors

Active Publication Date: 2020-12-22
SUZHOU SUNWELL NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under the superposition of various factors, it is difficult to achieve a stable and reliable photolithographic effect in practice

Method used

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Embodiment 1

[0025] Please refer to the attached figure 1 , a method for preparing a patterned material, using a oriented monocrystalline silicon wafer as a substrate 1, comprising the following preparation steps:

[0026] S1, coating, such as figure 1 As shown in (a), a water-insoluble polymer is coated on the substrate 1 once, and then a single-layer coating layer 2 is formed by soft drying at 50°C; the polymer is polyhydroxystyrene containing protective groups . The protecting group is tert-butyl acrylate. The thickness of the coating layer 2 is 3um. In this embodiment, the coating method is spin coating, but the present invention is not limited thereto, other coating methods applicable to the present invention such as dip coating, roller coating, film coating, spray coating, doctor blade coating, electrostatic coating and silk screen printing The relevant technical solutions should also fall within the protection scope of the present invention, which is easily understood and accep...

Embodiment 2

[0031] Please refer to the attached figure 2 , a method for preparing a patterned material, using a oriented monocrystalline silicon wafer as a substrate 1, comprising the following preparation steps:

[0032] S1, coating, such as figure 2 As shown in (a), the water-insoluble polymer is coated twice on the substrate 1, and soft-baked at 50°C after each coating to form a laminated coating layer 2. The laminated coating layer The cloth layer 2 includes a first coating layer 3 and a second coating layer 4 . Wherein, the polymer to be coated for the first time is polystyrene containing a protective group 4-tert-butyloxycarbonyl, and the first coating layer 3 is formed after soft-baking. The polymer coated for the second time on the first coating layer 3 is polymethacrylate containing protective group acetal, and the second coating layer 4 is formed after soft-baking. In this embodiment, the coating layer 2 has a thickness of 60um. The coating method of the coating layer 2 i...

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Abstract

The invention relates to a graphical material preparation method which comprises the following preparation steps that S1, coating is conducted, specifically, a substrate is coated with a water-insoluble polymer once, and soft baking is conducted to form a single coating layer; or the the substrate is coated with a water-insoluble polymer for at least two times, soft baking is conducted after eachtime of coating so as to form a laminated coating layer, and the polymer contains a protective group; S2, printing is conducted, specifically, an acid-containing solution is printed to a reaction areaon the coating layer, and the reaction area corresponds to an area, which does not need to be reserved, in a graphical material; S3, heating is conducted, specifically, the acid-containing solution and the polymer in the reaction area are heated until the polymer in the reaction area is easily dissolved in water after losing the protective group; and S4, developing is conducted, specifically, thepolymer without the protective group in the reaction area is infiltrated into a developing solution, and the graphical material is formed on the coating layer. Compared with the prior art, the graphical material preparation method provided by the invention has the advantages that the preparation cost of the graphical material can be reduced, the preparation stability is improved, and the universality is high.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for preparing patterned materials. Background technique [0002] In the field of semiconductors, patterned materials are key functional materials to transfer patterns to substrates, and are usually made of photoresist by photolithography. In the prior art, compared with conventional photolithography, due to the advantage of improving the quantum efficiency of photoresist, chemical amplification photolithography has received more and more attention. [0003] In chemically amplified lithography, the main components of photoresists are polymers, photoacid generators, and corresponding additives and solvents. The polymer is insoluble in water due to the resin having protective groups. After the photoresist in the reaction zone is exposed, the photoacid generator in it will generate an acidic substance, which will be used as a chemical catalyst to remove the protective group o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D5/06B05D7/24B05D3/10B41M5/00
CPCB05D5/061B05D7/24B05D3/107B41M5/0041B05D2507/00B05D2502/00B05D2507/01B05D2602/00
Inventor 李中天
Owner SUZHOU SUNWELL NEW ENERGY CO LTD