Millimeter wave chip manufacturing method
A manufacturing method and millimeter-wave technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of millimeter-wave chips with burrs and not particularly smooth edges, so as to improve long-term reliability and The effect of residual stress and neat edges
Pending Publication Date: 2020-12-25
北京国联万众半导体科技有限公司
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Problems solved by technology
The edge of the millimeter-wave chip removed based on this method generally has burrs, and the edge is not particularly smooth
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[0020] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0021] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.
[0022] The invention di...
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The invention discloses a millimeter wave chip manufacturing method, which comprises the steps that back photoetching is performed on the back surface of a thinned wafer, wherein the purpose of the back photoetching is to photoetch a fragmentation channel on the back surface and protect an effective chip area of the wafer; back photoetching adopts a back fragmentation photolithography mask to carry out double-sided alignment on the front surface and the back surface of the chip, and then a back fragmentation channel is exposed; a chemical gas etching method is adopted in the next step, the back fragmentation area without photoresist protection is etched till a protection wax area is etched, and after etching is completed, the photoresist removing process is conducted; and after back etching is finished and photoresist on the back surface is removed, the thinned chip wafer to be taken is placed on a wafer taking device, the protective wax is melted off, and the discrete chips automatically fall onto the wafer taking device under the action of the gravity of the discrete chips. The chip prepared by the method is free of edge breakage or burrs and high in quality.
Description
technical field [0001] The invention relates to the technical field of manufacturing methods of electronic components, in particular to a manufacturing method of a millimeter wave chip. Background technique [0002] Millimeter waves refer to electromagnetic waves with a frequency in the range of 26.5GHz-300GHz. Millimeter waves are named because their wavelengths are on the order of millimeters. Compared with microwaves, millimeter waves have higher frequencies and shorter wavelengths, which can achieve greater Communication bandwidth and higher transmission rates enable higher-resolution imaging, so mmWave has numerous applications. At present, various millimeter-wave applications are mainly realized by various millimeter-wave chips, such as power amplifier chips for millimeter-wave bands, low-noise power amplifier chips, and millimeter-wave Schottky diodes. [0003] Since the millimeter wave chip works in the millimeter wave frequency band with higher frequency, the size ...
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IPC IPC(8): H01L21/683
CPCH01L21/6836H01L2221/68386
Inventor 张志国刘育青张洋阳李少鹏安国雨郭黛翡
Owner 北京国联万众半导体科技有限公司