Carbon-coated lithium orthosilicate tritium breeding agent and preparation method and preparation device system thereof
A tritium breeding agent and coating device technology, applied in the field of nuclear fusion, can solve the problems of cladding material corrosion, low release efficiency, and easy peeling off of the coating, and achieve uniform coating, simple method, and improved safety Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0050] This embodiment provides a C-coated Li 4 SiO 4 The preparation method of tritium multiplying agent, described preparation method provided in the present invention such as figure 1 Carry out in the shown device system, described preparation method comprises the following steps:
[0051] (1) Spherical Li with a particle size of 0.6mm 4 SiO 4 The particles are in a fluidized state in the protective atmosphere of argon;
[0052] (2) On the basis of continuing in step (1), pass carbon source gas methane into Li 4 SiO 4 In the protective atmosphere where the particles are located, the mixing temperature is 800°C, and the mixing time is 30 minutes; the gas flow rate of the carbon source gas is 125mL / min;
[0053] (3) C-coated Li was obtained after gravity sedimentation 4 SiO 4 Tritium breeder.
[0054] figure 2 The obtained C-coated Li by the preparation method provided by this embodiment 4 SiO 4 The EDS diagram of the tritium breeder, in which the C content reach...
Embodiment 2
[0058] This embodiment provides a C-coated Li 4 SiO 4 The preparation method of tritium multiplying agent, described preparation method provided in the present invention such as figure 1 Carry out in the shown device system, described preparation method comprises the following steps:
[0059] (1) Make spherical Li with an average particle size of 0.9mm 4 SiO 4 The particles are in a fluidized state in a protective atmosphere of nitrogen;
[0060] (2) On the basis of continuing in step (1), pass carbon source gas ethane into Li 4 SiO 4 In the protective atmosphere where the particles are located, the mixing temperature is 700°C, and the mixing time is 45 minutes; the gas flow rate of the carbon source gas is 160mL / min;
[0061] (3) C-coated Li was obtained after centrifugal sedimentation 4 SiO 4 Tritium breeder.
[0062] The obtained C-coated Li of the present embodiment 4 SiO 4 The C film thickness of the tritium breeder was 2.5 nm, and the resulting C coated Li 4 ...
Embodiment 3
[0064] This embodiment provides a C-coated Li 4 SiO 4 The preparation method of tritium multiplying agent, described preparation method provided in the present invention such as figure 1 Carry out in the shown device system, described preparation method comprises the following steps:
[0065] (1) Spherical Li with a particle size of 0.3mm 4 SiO 4 Particles are in a fluidized state in a protective atmosphere of helium;
[0066] (2) On the basis of continuing in step (1), pass carbon source gas ethylene into Li 4 SiO 4 In the protective atmosphere where the particles are located, the mixing temperature is 600°C, and the mixing time is 15 minutes; the gas flow rate of the carbon source gas is 85mL / min;
[0067](3) After filtration, C-coated Li 4 SiO 4 Tritium breeder.
[0068] The obtained C-coated Li of the present embodiment 4 SiO 4 The C film thickness of the tritium breeder was 1.5 nm, and the resulting C coated Li 4 SiO 4 The elemental composition and microscopi...
PUM
Property | Measurement | Unit |
---|---|---|
diameter | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com